SGSD200
Darlington Transistors PNP Power Darlington
在庫：5,805
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部品番号 : SGSD200
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パッケージ/ケース : TO-247-3
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Brand : STMicroelectronics
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Components Classification : Single Bipolar Transistors
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日付シート : SGSD200 データシート (PDF)
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Series : SGSD200
概要 SGSD200
Bipolar (BJT) Transistor PNP - Darlington 80 V 25 A 130 W Through Hole TO-247-3
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Package | Tube | Product Status | Obsolete |
| Transistor Type | PNP - Darlington | Current - Collector (Ic) (Max) | 25 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V | Vce Saturation (Max) @ Ib, Ic | 3.5V @ 80mA, 20A |
| Current - Collector Cutoff (Max) | 500µA | DC Current Gain (hFE) (Min) @ Ic, Vce | 500 @ 10A, 3V |
| Power - Max | 130 W | Mounting Type | Through Hole |
| Package / Case | TO-247-3 | Supplier Device Package | TO-247-3 |
| Base Product Number | SGSD200 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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