SI2337DS-T1-E3
P-channel MOSFET
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $0.467 | $0.47 |
10 | $0.415 | $4.15 |
30 | $0.389 | $11.67 |
100 | $0.363 | $36.30 |
500 | $0.323 | $161.50 |
1000 | $0.315 | $315.00 |
在庫:7,542
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : SI2337DS-T1-E3
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パッケージ/ケース : SOT23-3
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Brand : VISHAY
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Components Classification : Single FETs, MOSFETs
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日付シート : SI2337DS-T1-E3 データシート (PDF)
概要 SI2337DS-T1-E3
The P-channel MOSFET offers high efficiency and performance, making it an ideal choice for power management and switching applications. Its low on-resistance and high current carrying capability make it suitable for battery management, voltage regulation, and motor control
主な特長
応用
SWITCHING仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 80 V |
Id - Continuous Drain Current | 2.2 A | Rds On - Drain-Source Resistance | 270 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2 V |
Qg - Gate Charge | 17 nC | Minimum Operating Temperature | - 50 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 2.5 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI2 | Brand | Vishay Semiconductors |
Configuration | Single | Fall Time | 12 ns |
Forward Transconductance - Min | 4.3 S | Height | 1.45 mm |
Length | 2.9 mm | Product Type | MOSFET |
Rise Time | 15 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 20 ns | Typical Turn-On Delay Time | 10 ns |
Width | 1.6 mm | Part # Aliases | SI2337DS-T1-BE3 SI2337DS-E3 |
Unit Weight | 0.000282 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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