• SI2365EDS-T1-GE3 SOT23-3
SI2365EDS-T1-GE3 SOT23-3

SI2365EDS-T1-GE3

Lead-Free ROHS Compliance

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  • 90日間のアフター保証
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概要 SI2365EDS-T1-GE3

Built for high-power applications, the SI2365EDS-T1-GE3 is a P-channel MOSFET with impressive specs. Featuring a drain source voltage of -20V and a continuous drain current of -5.9A, this MOSFET is capable of handling demanding tasks with ease. The low on resistance of 0.0265ohm ensures efficient power transfer and minimal energy loss, while the threshold voltage of -1V makes it easy to drive and control in circuits. With a power dissipation rating of 1.7W and a compact SOT-23 package style with 3 pins, the SI2365EDS-T1-GE3 is designed for convenience and performance. Operating at temperatures up to 150°C, this transistor is suitable for a wide range of applications. Part of the TrenchFET Series, known for its high-quality and reliable performance, the SI2365EDS-T1-GE3 meets automotive qualification standards and has a MSL rating of MSL 1, allowing for indefinite storage. Additionally, this product is free from SVHC substances, making it environmentally friendly and compliant with regulations

SI2365EDS-T1-GE3

主な特長

  • Sophisticated control algorithm
  • Excellent dynamic response
  • Compact form factor
  • Fully functional to 150°C

応用

["Power Management for Portable and Consumer - Load Switches - DC/DC Converters"]

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 5.9 A Rds On - Drain-Source Resistance 26.5 mOhms
Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 13.8 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.7 W
Channel Mode Enhancement Tradename TrenchFET
Series SI2 Brand Vishay Semiconductors
Configuration Single Fall Time 14 ns
Height 1.45 mm Length 2.9 mm
Product Type MOSFET Rise Time 21 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 P-Channel Typical Turn-Off Delay Time 62 ns
Typical Turn-On Delay Time 22 ns Width 1.6 mm
Part # Aliases SI2365EDS-T1-BE3 SI4816DY-T1-E3-S Unit Weight 0.000282 oz

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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