SMUN5111DW1T1G
Trans Digital BJT PNP 50V 100mA 385mW Automotive AEC-Q101 6-Pin SC-88 T/R
在庫:8,434
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : SMUN5111DW1T1G
-
パッケージ/ケース : SOT-363-6
-
Brand : onsemi
-
Components Classification : Bipolar Transistor Arrays, Pre-Biased
-
日付シート : SMUN5111DW1T1G データシート (PDF)
概要 SMUN5111DW1T1G
The SMUN5111DW1T1G digital transistor series is a game-changer in the realm of electronic components. Designed to simplify circuit design and save space, these transistors are equipped with a built-in bias network that eliminates the need for external resistors. This Bias Resistor Transistor (BRT) features a monolithic design, with two integrated resistors - a series base resistor and a base-emitter resistor. By consolidating these components into a single device, the BRT streamlines the manufacturing process and reduces overall system cost
主な特長
- Smart Home Automation
- Wireless Connectivity
- Simplified Setup Process
- Increased Network Security
- Improved Voice Control
- Enhanced Customer Experience
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Status | Active | Transistor Type | 2 PNP (Dual) |
Current - Collector (Ic) (Max) | 100mA | Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300nA, 10mA | Current - Collector Cutoff (Max) | 500nA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V | Power - Max | 385mW |
Operating Temperature | -55°C ~ 150°C (TJ) | Grade | Automotive |
Qualification | AEC-Q101 | Mounting Type | Surface Mount |
Package / Case | SOT-363-6 | Supplier Device Package | SC-88/SC70-6/SOT-363 |
Base Product Number | SMUN5111 | Manufacturer | onsemi |
Product Category | Bipolar Transistors - Pre-Biased | RoHS | Details |
Mounting Style | SMD/SMT | Series | MUN5111DW1 |
Brand | onsemi | Product Type | BJTs - Bipolar Transistors - Pre-Biased |
Factory Pack Quantity | 3000 | Subcategory | Transistors |
Unit Weight | 0.000219 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![SSM3J328R,LF](/files/uploads/product/s/d0364abaefdb4bcf86d7d9042bd6dd84.webp)
SSM3J328R,LF
29.8m¦¸@4.5V,3A 1W 1V@1mA
![ESM2030DV](/img/package/sot.jpg)
ESM2030DV
High-power NPN silicon transistor designed for industrial applications
![FGH40N60SMDF](/img/package/to247.jpg)
FGH40N60SMDF
Trans IGBT Chip N-CH 600V 80A 349W 3-Pin(3+Tab) TO-247 Tube
![PSMN014-40YS,115](/img/package/sc70.jpg)
PSMN014-40YS,115
Nexperia PSMN014-40YS,115
![PSMN015-100YLX](/img/package/sot669.jpg)
PSMN015-100YLX
LFPAK56 packaged logic level MOSFET with 15mΩ on-resistance at 100V
![PSMN020-100YS,115](/img/package/sc70.jpg)
PSMN020-100YS,115
37 mOhm Resistance
![PSMN022-30PL,127](/img/package/to220.jpg)
PSMN022-30PL,127
High-performance N-channel MOSFET engineered for logic-level circuits
![PSMN039-100YS,115](/img/package/so5.jpg)
PSMN039-100YS,115
Trans MOSFET N-CH 100V 28.1A 5-Pin(4+Tab) LFPAK T/R
![PSMN1R4-40YLDX](/img/package/sot669.jpg)
PSMN1R4-40YLDX
With a maximum power dissipation of 238W and a threshold voltage of 2.2V at 1mA, this MOSFET is suitable for high-performance applications
![PSMN1R9-40PLQ](/img/package/to220.jpg)
PSMN1R9-40PLQ
Trans MOSFET N-CH 40V 150A 3-Pin(3+Tab) TO-220AB Rail
![SSM3K35AMFV,L3F](/img/package/sot23.jpg)
SSM3K35AMFV,L3F
MOSFET Transistor with N-type Channel, Suitable for Low-Power Applications at 20V
![A2I25D025NR1](/img/package/to3.jpg)
A2I25D025NR1
RF Amplifier operating within the frequency range of 2300-2690 MHz, capable of delivering an average power of 2.5 W at 28 V
![CM100E3U-24H](/img/package/module.jpg)
CM100E3U-24H
CM100E3U-24H by MITSUBISHI - power module
![IRF7811AVTRPBF](/img/package/so8.jpg)
IRF7811AVTRPBF
IRF7811AVTRPBF is a MOSFET device designed for applications requiring a maximum voltage of 30V
![IRG4PC40S](/img/package/to247ac.jpg)
IRG4PC40S
N-Channel Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, TO-247AC, TO-3P, 3 PIN
![AUIRF7341QTR](/files/uploads/product/s/ff2adefec67e40c09fb6b527ed0fdf3a.webp)
AUIRF7341QTR
55V 5.1A N-Channel MOSFET with AEC-Q101 Certification
![SI8425DB-T1-E1](/img/package/ufbga9.jpg)
SI8425DB-T1-E1
Trans MOSFET P-CH 20V 9.3A 4-Pin Micro Foot T/R
![2SC5006-T1-A](/img/package/sot23.jpg)
2SC5006-T1-A
Silicon NPN RF Bipolar Transistors for Amplification
![BLA0912-250](/img/package/sot.jpg)
BLA0912-250
BLA0912-250 NXP N-Channel MOSFET Transistor, 75V, 3-Pin LDMOST
![AUIRFS4010-7P](/img/package/to263.jpg)
AUIRFS4010-7P
This MOSFET is specifically designed for automotive applications, capable of handling up to 190A of current