SMUN5131DW1T1G
Trans Digital BJT PNP 50V 100mA 385mW Automotive AEC-Q101 6-Pin SC-88 T/R
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $0.240 | $0.24 |
200 | $0.093 | $18.60 |
500 | $0.090 | $45.00 |
1000 | $0.088 | $88.00 |
在庫:8,758
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : SMUN5131DW1T1G
-
パッケージ/ケース : SOT-363-6
-
ブランド : onsemi
-
コンポーネントの分類 : Bipolar Transistor Arrays, Pre-Biased
-
日付シート : SMUN5131DW1T1G データシート (PDF)
概要 SMUN5131DW1T1G
Engineers looking to optimize their electronic systems can benefit greatly from the advanced features of the SMUN5131DW1T1G digital transistor. By replacing traditional devices and external resistor bias networks with this innovative technology, designers can achieve significant improvements in system performance and efficiency. With the integration of key components into a single device, the BRT transistor simplifies the design process and reduces the overall complexity of electronic circuits. This results in cost savings, enhanced reliability, and greater flexibility in system integration. Choose the SMUN5131DW1T1G digital transistor for your next project and experience the benefits of cutting-edge BRT technology
主な特長
- Sustainable Power Management
- High-Speed Data Transfer Rates
- Error Detection and Correction
- Advanced Error Handling Mechanisms
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Status | Active | Transistor Type | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA | Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 2.2kOhms | Resistor - Emitter Base (R2) | 2.2kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 5mA, 10V | Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA |
Current - Collector Cutoff (Max) | 500nA | Power - Max | 250mW |
Mounting Type | Surface Mount | Package / Case | SOT-363-6 |
Supplier Device Package | SC-88/SC70-6/SOT-363 | Base Product Number | SMUN5131 |
Manufacturer | onsemi | Product Category | Bipolar Transistors - Pre-Biased |
RoHS | Details | Configuration | Dual |
Transistor Polarity | PNP | Typical Input Resistor | 2.2 kOhms |
Mounting Style | SMD/SMT | Collector- Emitter Voltage VCEO Max | 50 V |
Continuous Collector Current | 100 mA | Pd - Power Dissipation | 187 mW |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Series | MUN5131DW1 | Brand | onsemi |
Product Type | BJTs - Bipolar Transistors - Pre-Biased | Qualification | AEC-Q101 |
Factory Pack Quantity | 3000 | Subcategory | Transistors |
Unit Weight | 0.000265 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![SSM3J328R,LF](/files/uploads/product/s/d0364abaefdb4bcf86d7d9042bd6dd84.webp)
SSM3J328R,LF
29.8m¦¸@4.5V,3A 1W 1V@1mA
![ESM2030DV](/img/package/sot.jpg)
ESM2030DV
High-power NPN silicon transistor designed for industrial applications
![FGH40N60SMDF](/img/package/to247.jpg)
FGH40N60SMDF
Trans IGBT Chip N-CH 600V 80A 349W 3-Pin(3+Tab) TO-247 Tube
![PSMN014-40YS,115](/img/package/sc70.jpg)
PSMN014-40YS,115
Nexperia PSMN014-40YS,115
![PSMN015-100YLX](/img/package/sot669.jpg)
PSMN015-100YLX
LFPAK56 packaged logic level MOSFET with 15mΩ on-resistance at 100V
![PSMN020-100YS,115](/img/package/sc70.jpg)
PSMN020-100YS,115
37 mOhm Resistance
![PSMN022-30PL,127](/img/package/to220.jpg)
PSMN022-30PL,127
High-performance N-channel MOSFET engineered for logic-level circuits
![PSMN039-100YS,115](/img/package/so5.jpg)
PSMN039-100YS,115
Trans MOSFET N-CH 100V 28.1A 5-Pin(4+Tab) LFPAK T/R
![PSMN1R4-40YLDX](/img/package/sot669.jpg)
PSMN1R4-40YLDX
With a maximum power dissipation of 238W and a threshold voltage of 2.2V at 1mA, this MOSFET is suitable for high-performance applications
![PSMN1R9-40PLQ](/img/package/to220.jpg)
PSMN1R9-40PLQ
Trans MOSFET N-CH 40V 150A 3-Pin(3+Tab) TO-220AB Rail
![CM2500DY-24S](/img/product.png)
CM2500DY-24S
CM2500DY-24S is a 1.2KV 2.5KA Trans IGBT Module
![JANTX2N4399](/img/package/to-3.jpg)
JANTX2N4399
High Power 30A PNP Transistor
![IXFB300N10P](/img/package/to-3.jpg)
IXFB300N10P
100V Polar Power MOSFET with 300A Rating
![SI4835DY](/img/package/soic8.jpg)
SI4835DY
SI4835DY - High Current P-Channel MOSFET in Small Signal Si Technology
![STX112-AP](/img/package/to92.jpg)
STX112-AP
a 100v to-92 rohs to-92-ap ap
![IRFR3806PBF](/img/package/to252.jpg)
IRFR3806PBF
MOSFET N-Channel 60V 43A DPAK
![DTC123JETL](/img/package/sot416.jpg)
DTC123JETL
Digital Bipolar Junction Transistor NPN 50V 100mA
![DMN63D8LV-7](/img/package/sot563.jpg)
DMN63D8LV-7
Diodes Inc DMN63D8LV-7 Dual N-channel MOSFET Transistor, 0.26 A, 30 V, 6-Pin SOT-563
![MMBF4393LT1](/img/package/sc74.jpg)
MMBF4393LT1
SOT-23 (TO-236) 3 LEAD
![STA406A](/img/package/sip10.jpg)
STA406A
STA406A is a high-performance Trans Darlington NPN transistor designed for automotive applications