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SMUN5312DW1T1G

Complementary Pair of Bipolar Digital Transistors

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概要 SMUN5312DW1T1G

Designed for ease of use and enhanced functionality, the SMUN5312DW1T1G BRT digital transistors are revolutionizing the way circuits are developed and integrated. With its all-in-one design that includes a transistor and a monolithic bias network, this series eliminates the complex wiring required for traditional setups. By consolidating the base resistor and base-emitter resistor into a single package, the BRT simplifies the design process and reduces the potential for errors in circuit assembly. Additionally, the space-saving benefits of the BRT make it an attractive choice for applications where size constraints are a consideration. Whether you're a hobbyist, a professional engineer, or a manufacturer, the SMUN5312DW1T1G BRT series offers a cost-effective and efficient solution for all your electronic needs

主な特長

  • Characteristic 1: Property 1
  • Characteristic 2: Property 2
  • Characteristic 3: Property 3

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Product Status Active Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 22kOhms Resistor - Emitter Base (R2) 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA Power - Max 187mW
Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363 Base Product Number SMUN5312

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    部品の品質保証: 365 日

    返品・返金：90日以内

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