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STB80NF55-06T4

STB80NF55-06T4: A high-power, N-Channel MOSFET rated at 55 volts and 80 amperes, suitable for surface mount assembly in D2PAK format

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概要 STB80NF55-06T4

- The STB80NF55-06T4 silicon carbide Power MOSFET is a top-of-the-line component for any power electronics application. With its impressive 650V drain-source voltage rating and 80A continuous drain current capacity, this MOSFET is built to deliver high efficiency and superior performance. Its low on-resistance of 0.055 ohms ensures minimal power loss and maximum power transfer

主な特長

  • N-channel MOSFET for high-voltage applications
  • Fast-switching and high-reliability
  • Compact power conversion device

応用

  • Efficient power management
  • Industrial automation
  • Smart energy solutions

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case D2PAK-3 (TO-263-3) Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 55 V
Id - Continuous Drain Current 80 A Rds On - Drain-Source Resistance 6.5 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 189 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 300 W
Channel Mode Enhancement Series STB80NF55, STP80NF55
Brand STMicroelectronics Configuration Single
Fall Time 65 ns Forward Transconductance - Min 150 S
Height 4.6 mm Length 10.4 mm
Product Type MOSFET Rise Time 155 ns
Factory Pack Quantity 1000 Subcategory MOSFETs
Transistor Type 1 N-Channel Type MOSFET
Typical Turn-Off Delay Time 125 ns Typical Turn-On Delay Time 27 ns
Width 9.35 mm Unit Weight 0.139332 oz

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    部品の品質保証: 365 日

    返品・返金：90日以内

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