SMUN5314DW1T1G
BRT Complementary Bipolar Digital Transistor
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $0.245 | $0.24 |
| 10 | $0.184 | $1.84 |
| 30 | $0.157 | $4.71 |
| 100 | $0.125 | $12.50 |
| 500 | $0.111 | $55.50 |
| 1000 | $0.102 | $102.00 |
在庫：8,551
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : SMUN5314DW1T1G
-
パッケージ/ケース : SOT-363-6
-
Brand : onsemi
-
Components Classification : Bipolar Transistor Arrays, Pre-Biased
-
日付シート : SMUN5314DW1T1G データシート (PDF)
概要 SMUN5314DW1T1G
The SMUN5314DW1T1G is a game-changing product for engineers and designers looking to streamline their transistor design. With its innovative Bias Resistor Transistor (BRT) technology, this digital transistor offers a simple and efficient solution by integrating the external resistor bias network into a single device. This not only saves valuable board space but also reduces overall system costs, making it a cost-effective option for various applications
主な特長
- Improves System Reliability
- Enhances Performance Efficiency
- Simplifies Error Handling
- Boosts Processing Speed
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Status | Active | Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA | Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 10kOhms | Resistor - Emitter Base (R2) | 47kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V | Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA | Power - Max | 187mW |
| Mounting Type | Surface Mount | Package / Case | SOT-363-6 |
| Supplier Device Package | SC-88/SC70-6/SOT-363 | Base Product Number | SMUN5314 |
| Manufacturer | onsemi | Product Category | Bipolar Transistors - Pre-Biased |
| RoHS | Details | Mounting Style | SMD/SMT |
| Series | MUN5314DW1 | Brand | onsemi |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | Qualification | AEC-Q101 |
| Factory Pack Quantity | 3000 | Subcategory | Transistors |
| Unit Weight | 0.000219 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
SSM3J328R,LF
29.8m¦¸@4.5V,3A 1W 1V@1mA
ESM2030DV
High-power NPN silicon transistor designed for industrial applications
FGH40N60SMDF
Trans IGBT Chip N-CH 600V 80A 349W 3-Pin(3+Tab) TO-247 Tube
PSMN014-40YS,115
Nexperia PSMN014-40YS,115
PSMN015-100YLX
LFPAK56 packaged logic level MOSFET with 15mΩ on-resistance at 100V
PSMN020-100YS,115
37 mOhm Resistance
PSMN022-30PL,127
High-performance N-channel MOSFET engineered for logic-level circuits
PSMN039-100YS,115
Trans MOSFET N-CH 100V 28.1A 5-Pin(4+Tab) LFPAK T/R
PSMN1R4-40YLDX
With a maximum power dissipation of 238W and a threshold voltage of 2.2V at 1mA, this MOSFET is suitable for high-performance applications
PSMN1R9-40PLQ
Trans MOSFET N-CH 40V 150A 3-Pin(3+Tab) TO-220AB Rail
TK15A20D
Silicon N-Channel MOSFET for 200V operation with 15A current handling in TO-220SIS package
SI2318DS-T1-E3
40V MOSFET with 3A rating and 45mΩ at 10V
Q6030LH5
3-pin Alternistor TRIAC, 600V V(DRM), 30A I(T)RMS
BSO303P
DSO-8 MOSFET, P-Channel, -30V, -8.2A
IXFA180N10T2
IXFA180N10T2 specifications
ZXTP2012ZTA
SOT-89 Bipolar Junction Transistor PNP General Purpose 60V 4.3A 2100mW 4-Pin (3+Tab)
BC638TA
Transistor General Purpose Bipolar Junction (BJT) PNP with a Voltage rating of 60V and Current rating of 1A in a TO-92 package
NP75P04YLG-E1-AY
NP75P04YLG-E1-AY
IRFR9110PBF
P-channel MOSFET transistor IRFR9110PBF has a maximum current rating of 3.1 A and a voltage rating of 100 V, housed in a 3-pin D-PAK package
BCP56T1
Bipolar Transistors - BJT 1A 100V NPN