STA413A
10-Pin SIP Packaged NPN Bipolar Transistor with 40V Vce and 3A Ic Ratings
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $9.110 | $9.11 |
| 200 | $3.525 | $705.00 |
| 500 | $3.402 | $1,701.00 |
| 800 | $3.340 | $2,672.00 |
在庫：5,695
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : STA413A
-
パッケージ/ケース : SIP
-
ブランド : Sanken Electric USA Inc.
-
コンポーネントの分類 : Bipolar Transistor Arrays
-
日付シート : STA413A データシート (PDF)
概要 STA413A
Bipolar (BJT) Transistor Array 4 NPN (Quad) 35V 3A 4W Through Hole 10-SIP
主な特長
- Enhanced signal quality analysis
- Frequency agile and stable
- Multistandard receiver support
- Error correction and detection
- Digital TV standards compliance
- Real-time data processing
応用
- Robust surveillance solutions
- Noise-free industrial environments
- Premium automotive audio
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| ECCN (US) | EAR99 | Part Status | Obsolete |
| Type | NPN | Category | Bipolar Power |
| Configuration | Quad Common Emitter | Number of Elements per Chip | 4 |
| Maximum Collector Base Voltage (V) | 40 | Maximum Collector-Emitter Voltage (V) | 40 |
| Maximum Emitter Base Voltage (V) | 6 | Maximum Collector-Emitter Saturation Voltage (V) | 0.5@5mA@1A |
| Maximum DC Collector Current (A) | 3 | Minimum DC Current Gain | [email protected]@4V |
| Maximum Power Dissipation (mW) | 4000 | Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 150 | Mounting | Through Hole |
| Package Height | 9 | Package Width | 4 |
| Package Length | 25.25 | PCB changed | 10 |
| Standard Package Name | SIP | Supplier Package | SIP |
| Pin Count | 10 | Lead Shape | Through Hole |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
STD03N
Temperature-compensated epitaxial construction guarantees consistent results
STA402A
Description: STA402A - A set of 4A SIP-10 Darlington Transistor Arrays compliant with ROHS standards
STA460C
Silicon Plastic/Epoxy STA460C Transistor, 10 Pin SIP-10
STA471A
10SIP 60V 2A NPN DARLINGTON TRANSISTOR MODULE
STA457C
Power Bipolar Transistor with a 4A Collector Current and 60V Collector-Emitter Breakdown Voltage
STA303A
SIP-8 Darlington Transistors with ROHS Certification
STA403A
Bipolar Junction Transistor SIP Array Darlington
STA421A
Transistor STA421A is a PNP bipolar junction transistor suitable for general purpose applications
STA461C
10-pin Power Bipolar Transistor with a VCEO of 70V
SLA5022
PNP/N CH 60V 6A SIP TRANSISTOR
BSC190N15NS3GATMA1
150 V 19 mOhm 23 nC Single N-Channel OptiMOS Power Mosfet TDSON-8
APT20M11JVFR
200V N-type MOSFET with 175A Current Rating
IXFH42N20
Described as a 200V N-channel MOSFET, IXFH42N20 boasts a hefty 42A current capacity and comes in a TO-247AD package with 3 pins
CM400DY-12H
Unleash the potential of your electronics with CM400DY-12H, a state-of-the-art Trans IGBT Module tailored for N-Channel setups
IXFN44N100P
Power Field-Effect Transistor with 37A current, 1000V voltage, and 0.22ohm resistance
BSM300GA120DN2FS
This module, designated as BSM300GA120DN2FS, is equipped with IGBT technology capable of handling 1200V and 300A
PSMN1R4-40YLDX
With a maximum power dissipation of 238W and a threshold voltage of 2.2V at 1mA, this MOSFET is suitable for high-performance applications
IRFR5410PBF
Single P-Channel Power MOSFET with a voltage rating of 100V in a D-Pak package
STP130NS04ZB
N-Channel Power MOSFET with 80A Current Rating, 33V Voltage Capability, and 0.009ohm Resistance, TO-220AB Package