STD3N95K5AG
Trans MOSFET N-CH 950V 2A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
在庫：8,205
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : STD3N95K5AG
-
パッケージ/ケース : DPAK
-
Brand : STMicroelectronics
-
Components Classification : Single FETs, MOSFETs
-
日付シート : STD3N95K5AG データシート (PDF)
-
Series : STD3N95K5AG
概要 STD3N95K5AG
The innovative design of the STD3N95K5AG product showcases the latest in Power MOSFET technology, featuring very high voltage capabilities and superior performance. Utilizing MDmesh K5 technology and a proprietary vertical structure, this Power MOSFET offers a significant reduction in on-resistance and gate charge, ensuring exceptional power density and efficiency for a variety of high-demand applications
主な特長
- AEC-Q101 qualified
- Industry’s lowest RDS(on) x area
- Industry’s best FoM (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Manufacturer | STMicroelectronics | Product Category | MOSFET |
| RoHS | Details | Technology | Si |
| Mounting Style | SMD/SMT | Package / Case | TO-252-3 |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 950 V | Id - Continuous Drain Current | 2 A |
| Rds On - Drain-Source Resistance | 4.3 Ohms | Vgs - Gate-Source Voltage | - 30 V, + 30 V |
| Vgs th - Gate-Source Threshold Voltage | 3 V | Qg - Gate Charge | 3.4 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 45 W | Channel Mode | Enhancement |
| Qualification | AEC-Q101 | Tradename | MDmesh |
| Series | STD3N95K5AG | Brand | STMicroelectronics |
| Configuration | Single | Fall Time | 32.5 ns |
| Product Type | MOSFET | Rise Time | 13.5 ns |
| Factory Pack Quantity | 2500 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 20.5 ns |
| Typical Turn-On Delay Time | 8.5 ns | Unit Weight | 0.011640 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
STB60NF06T4
High-performance 60NF06T4 MOSFET for power applications
STD18N55M5
Trans MOSFET N-CH Si 550V 16A 3-Pin(2+Tab) DPAK T/R
STL160NS3LLH7
LGS LV MOSFET, product STL160NS3LLH7, is described as a MOSFET
STP6NK90ZFP
N-Channel MOSFET with 900V and 1.56ohms Zener SuperMESH technology, rated for 5.8A
STL3N65M2
Trans MOSFET N-CH 650V 2.3A 8-Pin Power Flat EP T/R
STW18NK80Z
Product Description: Transistor MOSFET N-Channel 800 Volts 19 Amps 3-Pin TO-247 Tube
STD15P6F6AG
Trans MOSFET P-CH 60V 10A Automotive 3-Pin(2+Tab) DPAK T/R
STB100N10F7
The STB100N10F7 MOSFET transistor made by STMicroelectronics features N-channel design
KSC2752OSTU
ON Semi KSC2752OSTU NPN Transistor, 500 mA, 400 V, 3-Pin TO-126
AUIRF4905STRL
Automotive-Qualified Single P-Channel HEXFET Power MOSFET for -55V operation, housed in a D2-Pak Package compliant with RoHS regulations
ZVN4106FTA
Metal-Oxide-Semiconductor Field-Effect Transistor N-Channel 60V
2N3507
2N3507 Product Overview: Power Bipolar Transistor - BJT
2N3772G
2N3772G power transistor with NPN configuration
SI9424DY
This product, SI9424DY, is a MOSFET rated for 20V voltage and 7.7A current, with a power dissipation of 2.5W
25MT060WFAPBF
Full-Warp Speed
BLF177,112
N-Channel 125V 16A 4-Pin CRFM
IRLML2803GTRPBF
30V MOSFET with 1.2A current rating
ZXMN10A07ZTA
ZXMN10A07ZTA: Transistor MOSFET, N-channel, capable of handling 100 volts and 1 ampere, housed in a 4-pin SOT-89 package
JANTX2N3019
Trans GP BJT NPN 80V 1A 800mW 3-Pin TO-39 Box
FP10R12KE3
Advanced Electronic IGBT Component