STE110NS20FD
ISOTOP-4 package 110A, 200V N-CHANNEL Si POWER MOSFET
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部品番号 : STE110NS20FD
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パッケージ/ケース : ISOTOP
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Brand : STMicroelectronics
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Components Classification : Single FETs, MOSFETs
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日付シート : STE110NS20FD データシート (PDF)
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Series : STE110NS20FD
概要 STE110NS20FD
Designed for high-power applications, the STE110NS20FD MOSFET combines impressive specs with a compact form factor. With a voltage rating of 200V and a continuous current capacity of 110A, this transistor can handle demanding loads with ease. Its low on-resistance of 0.024ohm at a gate-to-source voltage of 10V ensures minimal power losses and efficient operation. The ISOTOP case style with screw termination simplifies installation and provides a secure connection. Featuring a pulse current rating of 440A, this MOSFET is capable of delivering short bursts of power without overheating. Operating within a wide temperature range, from 25°C to a maximum junction temperature of 150°C, ensures reliability in diverse operating conditions. With dimensions of 25.4mm x 12.2mm x 38mm (W x H x D) and a power dissipation of 500W, the STE110NS20FD is ideal for space-constrained applications that require high power-handling capabilities
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | MESH OVERLAY™ | Package | Tube |
| Product Status | Obsolete | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 50A, 10V | Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 504 nC @ 10 V | Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 7900 pF @ 25 V | Power Dissipation (Max) | 500W (Tc) |
| Operating Temperature | 150°C (TJ) | Mounting Type | Chassis Mount |
| Supplier Device Package | ISOTOP® | Package / Case | ISOTOP |
| Base Product Number | STE1 |
保証と返品
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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