STF12N50M2
Trans MOSFET N-CH 500V 10A 3-Pin(3+Tab) TO-220FP Tube
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部品番号 : STF12N50M2
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パッケージ/ケース : TO-220FP
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Brand : STMicroelectronics
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Components Classification : Single FETs, MOSFETs
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日付シート : STF12N50M2 データシート (PDF)
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Series : STF12N50M2
概要 STF12N50M2
Revolutionizing the field of Power MOSFETs, the STF12N50M2 stands out as a premium choice for applications requiring optimal performance and efficiency. Utilizing the latest MDmesh™ technology, including the MDmesh II Plus™ low Qg innovation, this N-channel Power MOSFET delivers outstanding on-resistance and gate charge characteristics. Its unique vertical structure and strip layout design make the STF12N50M2 a top contender for demanding high efficiency converters that demand nothing but the best
主な特長
- Extremely low gate charge
- Lower RDS(on)x area vs previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener-protected
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Manufacturer | STMicroelectronics | Product Category | MOSFET |
RoHS | Details | Technology | Si |
Mounting Style | Through Hole | Package / Case | TO-220-3 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 500 V | Id - Continuous Drain Current | 10 A |
Rds On - Drain-Source Resistance | 325 mOhms | Vgs - Gate-Source Voltage | - 25 V, + 25 V |
Vgs th - Gate-Source Threshold Voltage | 2 V | Qg - Gate Charge | 15 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 85 W | Channel Mode | Enhancement |
Tradename | MDmesh | Series | STF12N50M2 |
Brand | STMicroelectronics | Configuration | Single |
Fall Time | 34.5 ns | Product Type | MOSFET |
Rise Time | 10.5 ns | Factory Pack Quantity | 1000 |
Subcategory | MOSFETs | Typical Turn-Off Delay Time | 8 ns |
Typical Turn-On Delay Time | 13.5 ns | Unit Weight | 0.068784 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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