IXFH20N80Q
Brand new, still in its original packaging
在庫：5,108
- 90日間のアフター保証
- 365日の品質保証
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部品番号 : IXFH20N80Q
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パッケージ/ケース : TO247-3
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ブランド : IXYS
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : IXFH20N80Q データシート (PDF)
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Series : IXFH20N80
概要 IXFH20N80Q
The IXFH20N80Q is a high-performance MOSFET transistor designed for heavy-duty applications. With a maximum drain-source voltage of 800V and a continuous drain current of 20A, this N-channel transistor can handle high power loads with ease. The transistor is capable of dissipating up to 360W of power while maintaining a low on-state resistance of 0.35 ohms at a test voltage of 10V
主な特長
- Enhanced thermal management capabilities
- Dual N-channel and P-channel devices
- Low input capacitance for minimal distortion
応用
- Versatile application usage
- Robust design
- Long-lasting durability
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Drain-Source Voltage (V) | 800 | Maximum On-Resistance @ 25 ℃ (Ohm) | 0.42 |
| Continuous Drain Current @ 25 ℃ (A) | 20 | Gate Charge (nC) | 150 |
| Input Capacitance, CISS (pF) | 5100 | Thermal resistance [junction-case] (K/W) | 0.35 |
| Configuration | Single | Package Type | TO-247 |
| Power Dissipation (W) | 357 | Maximum Reverse Recovery (ns) | 250 |
| Sample Request | No |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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