STF18N65DM2
MOSFET N-channel 650 V, 231 mOhm typ., 12 A, MDmesh DM2 Power MOSFET
在庫：6,339
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : STF18N65DM2
-
パッケージ/ケース : TO-220FP
-
Brand : STMicroelectronics
-
Components Classification : Single FETs, MOSFETs
-
日付シート : STF18N65DM2 データシート (PDF)
-
Series : STF18N65DM2
概要 STF18N65DM2
With its exceptional performance characteristics, the STF18N65DM2 stands out as a high-voltage N-channel Power MOSFET in the market. Part of the MDmesh DM2 fast-recovery diode series, this product offers very low recovery charge (Qrr) and time (trr), along with low RDS(on), making it an ideal solution for demanding high-efficiency converters. Moreover, its suitability for bridge topologies and ZVS phase-shift converters further enhances its appeal in the industry
主な特長
- Fast-recovery body diode
- Extremely low gate charge and input capacitance
- Low on-resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Manufacturer | STMicroelectronics | Product Category | MOSFET |
| RoHS | Details | Brand | STMicroelectronics |
| Product Type | MOSFET | Factory Pack Quantity | 1000 |
| Subcategory | MOSFETs |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
STB60NF06T4
High-performance 60NF06T4 MOSFET for power applications
STD18N55M5
Trans MOSFET N-CH Si 550V 16A 3-Pin(2+Tab) DPAK T/R
STL160NS3LLH7
LGS LV MOSFET, product STL160NS3LLH7, is described as a MOSFET
STP6NK90ZFP
N-Channel MOSFET with 900V and 1.56ohms Zener SuperMESH technology, rated for 5.8A
STL3N65M2
Trans MOSFET N-CH 650V 2.3A 8-Pin Power Flat EP T/R
STW18NK80Z
Product Description: Transistor MOSFET N-Channel 800 Volts 19 Amps 3-Pin TO-247 Tube
STD15P6F6AG
Trans MOSFET P-CH 60V 10A Automotive 3-Pin(2+Tab) DPAK T/R
STB100N10F7
The STB100N10F7 MOSFET transistor made by STMicroelectronics features N-channel design
KSC2752OSTU
ON Semi KSC2752OSTU NPN Transistor, 500 mA, 400 V, 3-Pin TO-126
AUIRF4905STRL
Automotive-Qualified Single P-Channel HEXFET Power MOSFET for -55V operation, housed in a D2-Pak Package compliant with RoHS regulations
BSH201,215
BSH201 - P-Channel MOSFET, Small Signal FET, 0.3A, 60V
NGTB25N120LWG
Trans IGBT Chip
IRF3710SPBF
IRF3710SPBF, N-channel MOSFET Transistor 57 A 100 V, 3-Pin D2PAK
UMD12NTR
Compliance: ROHS certified for environmental standards
SI4850EY-T1-E3
Transistor metal-oxide-semiconductor field-effect transistor N-channel 60V 6A 8-pin small outline integrated circuit package N tape and reel
VS-100MT060WDF
Trans IGBT Module N-CH 600V 121A 462W 14-Pin MTP
CFH800
Compact FET for RF applications, suitable for S-band frequency rang
2SC2412KT146Q
NPN silicon transistor optimized for small-signal amplification, enclosed in an SC-59 package, capable of handling up to 0
IXTK32P60P
Field-Effect Transistor for power applications
UMZ1NFHATR
Transistors with high reliability for bipolar applications