STGB19NC60KDT4
Trans IGBT Chip N-CH 600V 35A 125W 3-Pin(2+Tab) D2PAK T/R
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $1.441 | $1.44 |
| 10 | $1.270 | $12.70 |
| 30 | $1.173 | $35.19 |
| 100 | $1.066 | $106.60 |
| 500 | $1.019 | $509.50 |
| 1000 | $0.997 | $997.00 |
在庫：7,777
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : STGB19NC60KDT4
-
パッケージ/ケース : TO-263-3
-
Brand : STMicroelectronics
-
Components Classification : Single IGBTs
-
日付シート : STGB19NC60KDT4 データシート (PDF)
-
Series : STGB19NC60KDT4
概要 STGB19NC60KDT4
The STGB19NC60KDT4 is the pinnacle of IGBT technology, designed for high-speed performance and efficiency. With the innovative PowerMESH™ technology, these devices offer a perfect balance between rapid switching capabilities and minimal on-state energy loss. Whether you're working on power electronics, motor control, or renewable energy systems, these IGBTs are sure to exceed your expectations
主な特長
- Surge immunity up to 10 kV
- Low noise operation
- Overtemperature protection
- High efficiency
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | PowerMESH™ | Product Status | Active |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | Current - Collector (Ic) (Max) | 35 A |
| Current - Collector Pulsed (Icm) | 75 A | Vce(on) (Max) @ Vge, Ic | 2.75V @ 15V, 12A |
| Power - Max | 125 W | Switching Energy | 165µJ (on), 255µJ (off) |
| Input Type | Standard | Gate Charge | 55 nC |
| Td (on/off) @ 25°C | 30ns/105ns | Test Condition | 480V, 12A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 31 ns | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Supplier Device Package | D2PAK | Base Product Number | STGB19 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
STB60NF06T4
High-performance 60NF06T4 MOSFET for power applications
STD18N55M5
Trans MOSFET N-CH Si 550V 16A 3-Pin(2+Tab) DPAK T/R
STL160NS3LLH7
LGS LV MOSFET, product STL160NS3LLH7, is described as a MOSFET
STP6NK90ZFP
N-Channel MOSFET with 900V and 1.56ohms Zener SuperMESH technology, rated for 5.8A
STL3N65M2
Trans MOSFET N-CH 650V 2.3A 8-Pin Power Flat EP T/R
STW18NK80Z
Product Description: Transistor MOSFET N-Channel 800 Volts 19 Amps 3-Pin TO-247 Tube
STD15P6F6AG
Trans MOSFET P-CH 60V 10A Automotive 3-Pin(2+Tab) DPAK T/R
STB100N10F7
The STB100N10F7 MOSFET transistor made by STMicroelectronics features N-channel design
KSC2752OSTU
ON Semi KSC2752OSTU NPN Transistor, 500 mA, 400 V, 3-Pin TO-126
AUIRF4905STRL
Automotive-Qualified Single P-Channel HEXFET Power MOSFET for -55V operation, housed in a D2-Pak Package compliant with RoHS regulations
TIP122TU
NPN Darlington Bipolar Power Transistor with a current rating of 5.0 Amps and voltage rating of 100 Volts
BC857BDW1T1G
General Purpose Bipolar Junction Transistor
FMMT459TA
The FMMT459TA transistor is an NPN type with a maximum voltage rating of 450V and a power dissipation capability of 625mW
HGTP7N60C3D
Fairchild HGTP7N60C3D IGBT
ZXMN6A11GTA
ZXMN6A11G Series for Power Applications
APT50GN60BG
APT50GN60BG is a Field Stop IGBT with ultra low VCE(ON) that operates at 600V
SST2222AT116
3-Pin SST NPN Transistor manufactured by ROHM, model SST2222AT116, with a rated current of 600 mA and a rated voltage of 40 V
SI2300DS-T1-GE3
VISHAY - SI2300DS-T1-GE3 - MOSFET, N CHANNEL, 30V, 3.6A, SOT-23-3
APT14M100B
APT14M100B is a MOSFET MOS8 with a voltage handling capability of 1000V and a current rating of 14A, housed in a TO-247 package
IRGB4062DPBF
Air Conditioner