STGF10H60DF
Transistor IGBT Chip N-Channel 600V 20A 30W 3-Pin TO-220FP Tube
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部品番号 : STGF10H60DF
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パッケージ/ケース : TO-220-3FullPack
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Brand : STMicroelectronics
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Components Classification : Single IGBTs
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日付シート : STGF10H60DF データシート (PDF)
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Series : STGF10H60DF
概要 STGF10H60DF
The STGF10H60DF is a high-voltage IGBT with a collector emitter voltage (V(br)ceo) of 600V, making it suitable for a wide range of power applications. With a DC collector current of 20A and a collector emitter saturation voltage (Vce(on)) of 1.5V, this IGBT offers efficient power switching and low power dissipation. The TO-220FP transistor case style allows for easy installation and optimal thermal management. Its power dissipation of 30W ensures reliable operation in challenging environments. Whether used in industrial control systems, renewable energy inverters, or motor drives, the STGF10H60DF provides exceptional performance and durability
主な特長
- Fine-grained trench gate structure
- Reduced switching losses achieved
- High current capability ensured
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Package | Tube | Product Status | Active |
| IGBT Type | Trench Field Stop | Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector (Ic) (Max) | 20 A | Current - Collector Pulsed (Icm) | 40 A |
| Vce(on) (Max) @ Vge, Ic | 1.95V @ 15V, 10A | Power - Max | 30 W |
| Switching Energy | 83µJ (on), 140µJ (off) | Input Type | Standard |
| Gate Charge | 57 nC | Td (on/off) @ 25°C | 19.5ns/103ns |
| Test Condition | 400V, 10A, 10Ohm, 15V | Reverse Recovery Time (trr) | 107 ns |
| Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack | Supplier Device Package | TO-220FP |
| Base Product Number | STGF10 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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