STGW40H120F2
Semiconductor Device: Insulated Gate Bipolar Transistor (IGBT) Chip, N-type, 1200 Volts, 80 Amperes, 468 milliwatts, TO-247 tube
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部品番号 : STGW40H120F2
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パッケージ/ケース : TO-247-3
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Brand : STMicroelectronics
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Components Classification : Single IGBTs
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日付シート : STGW40H120F2 データシート (PDF)
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Series : STGW40H120F2
概要 STGW40H120F2
With its innovative trench gate field-stop technology, the STGW40H120F2 IGBT stands out as a top-tier device in the H series. These IGBTs are specifically designed to optimize efficiency in high switching frequency converters by minimizing conduction and switching losses. The device's slightly positive VCE(sat) temperature coefficient and tight parameter distribution further enhance its suitability for reliable parallel operation
主な特長
- Rapid switching capability
- High surge immunity
- Compact thermal design
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Package | Tube | Product Status | Active |
| IGBT Type | Trench Field Stop | Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector (Ic) (Max) | 80 A | Current - Collector Pulsed (Icm) | 160 A |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 40A | Power - Max | 468 W |
| Switching Energy | 1mJ (on), 1.32mJ (off) | Input Type | Standard |
| Gate Charge | 158 nC | Td (on/off) @ 25°C | 18ns/152ns |
| Test Condition | 600V, 40A, 10Ohm, 15V | Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 | Base Product Number | STGW40 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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