• packageimg
packageimg

STN1NK60Z

N-channel MOSFET Zener SuperMESH 600V 0.25A

数量 単価(USD) 合計金額
1 $0.426 $0.43
10 $0.357 $3.57
30 $0.327 $9.81
100 $0.290 $29.00
500 $0.214 $107.00
1000 $0.203 $203.00

在庫：3,894

*価格は参考値です。
  • 90日間のアフター保証
  • 365日の品質保証
  • 正規品保証
  • 7*24時間サービス検疫

迅速な見積もり

見積もりリクエストを送信してください STN1NK60Z このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 STN1NK60Z

Featuring the latest innovations from STMicroelectronics, the STN1NK60Z Power MOSFET sets a new standard in power management. Through the utilization of SuperMESH™ technology, this device delivers improved on-resistance characteristics, enhancing efficiency and performance in a wide range of applications. With a focus on reliability and durability, the STN1NK60Z is engineered to meet the stringent requirements of modern power systems

主な特長

  • Exceptional temperature tolerance
  • High efficiency operation
  • Intelligent fault diagnosis

応用

SWITCHING

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Source Content uid STN1NK60Z Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS Part Package Code SOT-223
Package Description SOT-223, 4 PIN Pin Count 4
Reach Compliance Code not_compliant ECCN Code EAR99
Factory Lead Time 32 Weeks, 4 Days Samacsys Manufacturer STMicroelectronics
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V Drain Current-Max (Abs) (ID) 0.25 A
Drain Current-Max (ID) 0.25 A Drain-source On Resistance-Max 15 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JESD-30 Code R-PDSO-G4
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 4
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 2 W
Qualification Status Not Qualified Surface Mount YES
Terminal Finish MATTE TIN Terminal Form GULL WING
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING Transistor Element Material SILICON

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

  • 配送と梱包

    配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。

    部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。

  • 支払い

    たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。

    特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。

IXGH39N60BD1

IXGH39N60BD1

With its 3-pin configuration and tab connection, this IGBT chip is easily mountable and efficient in operation
CM150DY-24T

CM150DY-24T

Power semiconductor
IXFH20N80P

IXFH20N80P

The MOSFET is commonly used for high power switching and amplification in electronic circuits
DTC113ZKAT146

DTC113ZKAT146

Digital NPN transistor with a maximum voltage rating of 50V and current rating of 100mA in SOT346 package
IRFR9110PBF

IRFR9110PBF

P-channel MOSFET transistor IRFR9110PBF has a maximum current rating of 3.1 A and a voltage rating of 100 V, housed in a 3-pin D-PAK package
DMN63D8LV-7

DMN63D8LV-7

Diodes Inc DMN63D8LV-7 Dual N-channel MOSFET Transistor, 0.26 A, 30 V, 6-Pin SOT-563
NVF3055L108T1G

NVF3055L108T1G

A continuous drain current and 60V source voltage, featuring a SOT-223 package
SI2301DS-T1

SI2301DS-T1

Field-Effect Transistor with a voltage rating of 20V, current rating of 2.3A, and power dissipation of 1.25W
BUK9624-55A

BUK9624-55A

The BUK9624-55A is a Power Semiconductor Device
BTA08-800BW

BTA08-800BW

TRIAC rated at 800V and 85A with TO-220AB package