STW150NF55
With a specification of 55 volts voltage rating and an extremely low on-resistance of 0
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部品番号 : STW150NF55
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パッケージ/ケース : TO-247-3
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Brand : STMicroelectronics
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Components Classification : Single FETs, MOSFETs
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日付シート : STW150NF55 データシート (PDF)
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Series : STB150N
概要 STW150NF55
The STW150NF55 power MOSFET is engineered for high-speed switching in power supplies and motor control systems. With a maximum drain-source voltage of 55V and continuous drain current of 150A, it is well-suited for high-power applications. Its low on-resistance of 5mΩ ensures efficient power dissipation and minimal voltage drop, contributing to high efficiency and power density in system design. The gate threshold voltage of 2.5V and gate charge of 84nC enable compatibility with standard logic levels and facilitate fast switching speeds, ultimately improving overall system performance. Housed in a TO-247 package, the STW150NF55 MOSFET offers low thermal resistance and robustness for reliable operation in harsh environments. Additionally, its high avalanche energy rating provides protection against voltage spikes, ensuring long-term reliability
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | STripFET™ II | Package | Tube |
| Product Status | Obsolete | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 55 V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 60A, 10V | Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V | Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400 pF @ 25 V | Power Dissipation (Max) | 300W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 | Package / Case | TO-247-3 |
| Base Product Number | STW150 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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