STW30N65M5
Trans MOSFET N-CH Si 650V 22A 3-Pin(3+Tab) TO-247 Tube
在庫:4,249
- 90日間のアフター保証
- 365日の品質保証
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部品番号 : STW30N65M5
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パッケージ/ケース : TO-247-3
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Brand : ST
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Components Classification : Single FETs, MOSFETs
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日付シート : STW30N65M5 データシート (PDF)
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Series : STW30N65M5
概要 STW30N65M5
The STW30N65M5 is a cutting-edge N-channel MDmesh™ V Power MOSFET that is setting new standards for power efficiency and density. Using a unique vertical process technology and STMicroelectronics’ PowerMESH™ layout structure, this device offers incredibly low on-resistance, surpassing all other silicon-based Power MOSFETs on the market. This makes it the perfect choice for applications that demand top-notch performance and unbeatable efficiency. With the STW30N65M5, you can expect superior power handling capabilities and exceptional reliability, making it an ideal solution for a wide range of industrial and commercial uses
主な特長
- High surge withstand capability
- Fault-tolerant operation
- Improved reliability and durability
- Easy integration with existing systems for high-reliability applications
応用
SWITCHING仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Source Content uid | STW30N65M5 | Part Life Cycle Code | Active |
Ihs Manufacturer | STMICROELECTRONICS | Part Package Code | TO-247 |
Package Description | FLANGE MOUNT, R-PSFM-T3 | Pin Count | 3 |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Factory Lead Time | 52 Weeks | Samacsys Manufacturer | STMicroelectronics |
Additional Feature | AVALANCHE ENERGY RATED | Avalanche Energy Rating (Eas) | 500 mJ |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 650 V |
Drain Current-Max (Abs) (ID) | 22 A | Drain Current-Max (ID) | 22 A |
Drain-source On Resistance-Max | 0.139 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-247 | JESD-30 Code | R-PSFM-T3 |
JESD-609 Code | e3 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 140 W |
Pulsed Drain Current-Max (IDM) | 88 A | Qualification Status | Not Qualified |
Surface Mount | NO | Terminal Finish | Matte Tin (Sn) |
Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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