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STW30N80K5

Trans MOSFET N-CH 800V 24A 3-Pin(3+Tab) TO-247 Tube

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概要 STW30N80K5

When it comes to high voltage N-channel Power MOSFETs, the STW30N80K5 sets a new standard of excellence. Its MDmesh™ K5 technology has paved the way for significant advancements in on-resistance and gate charge reduction, resulting in superior power density and efficiency. This makes it well-suited for a variety of demanding applications, where performance and reliability are non-negotiable. With the STW30N80K5, engineers and designers can confidently push the boundaries of what's possible in their designs

主な特長

  • Compact power conversion and EMI filtering
  • Industry-leading efficiency and durability
  • Zener-diode protected for safe operation
  • Advanced power management and control

応用

SWITCHING

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Source Content uid STW30N80K5 Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS Reach Compliance Code not_compliant
ECCN Code EAR99 Factory Lead Time 52 Weeks
Samacsys Manufacturer STMicroelectronics Avalanche Energy Rating (Eas) 440 mJ
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 800 V
Drain Current-Max (Abs) (ID) 24 A Drain Current-Max (ID) 24 A
Drain-source On Resistance-Max 0.18 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 1.2 pF JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 250 W
Pulsed Drain Current-Max (IDM) 96 A Surface Mount NO
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application SWITCHING
Transistor Element Material SILICON

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    部品の品質保証: 365 日

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