STW42N60M2-EP
N-channel MOSFET with high voltage and current capabilitie
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部品番号 : STW42N60M2-EP
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パッケージ/ケース : TO-247-3
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ブランド : ST
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コンポーネントのカテゴリ : Single FETs, MOSFETs
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日付シート : STW42N60M2-EP データシート (PDF)
概要 STW42N60M2-EP
The STW42N60M2-EP sets a new standard for N-channel Power MOSFETs with its groundbreaking MDmesh™ M2 EP enhanced performance technology. Its strip layout and vertical structure enable low on-resistance and optimized switching characteristics, making it an ideal choice for the most demanding very high frequency converters. This advanced MOSFET is sure to meet the needs of industries and applications that require top-tier performance and reliability
主な特長
- Superior electromagnetic compatibility
- Low noise emissions
- Robust voltage sag performance
- Fault-tolerant operation available
応用
SWITCHING仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Source Content uid | STW42N60M2-EP | Part Life Cycle Code | Active |
Ihs Manufacturer | STMICROELECTRONICS | Reach Compliance Code | not_compliant |
ECCN Code | EAR99 | Factory Lead Time | 52 Weeks |
Samacsys Manufacturer | STMicroelectronics | Additional Feature | BULK: 1000 |
Avalanche Energy Rating (Eas) | 800 mJ | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 600 V |
Drain Current-Max (ID) | 34 A | Drain-source On Resistance-Max | 0.087 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | Feedback Cap-Max (Crss) | 2.5 pF |
JEDEC-95 Code | TO-247 | JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Operating Temperature-Min | -55 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 250 W | Pulsed Drain Current-Max (IDM) | 136 A |
Surface Mount | NO | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品のパッケージング保証: 100% ESD 帯電防止保護を特徴とする当社のパッケージングには、高い靭性と優れた緩衝機能が組み込まれています。
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