STW55NM60ND
TO-247 packaged N-channel MOSFET suitable for automotive applications, with a 600V voltage rating and 51A current handling capacity
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部品番号 : STW55NM60ND
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パッケージ/ケース : TO-247-3
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Brand : STMicroelectronics
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Components Classification : Single FETs, MOSFETs
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日付シート : STW55NM60ND データシート (PDF)
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Series : STW55NM60ND
概要 STW55NM60ND
The STW55NM60ND is a powerful N-channel Power MOSFET transistor that is meticulously crafted for high-power applications. With a drain-source breakdown voltage of 600V and a continuous drain current of 55A, this transistor is exceptionally well-suited for a wide range of power electronic systems. Its low on-state resistance of typically 0.07 ohms plays a pivotal role in minimizing power dissipation and enhancing efficiency in applications that demand high current
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | FDmesh™ II | Package | Tube |
| Product Status | Obsolete | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 51A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 25.5A, 10V | Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V | Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 5800 pF @ 50 V | Power Dissipation (Max) | 350W (Tc) |
| Operating Temperature | 150°C (TJ) | Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 | Package / Case | TO-247-3 |
| Base Product Number | STW55N |
保証と返品
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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