STW65N65DM2AG
Trans MOSFET N-CH 650V 60A Automotive AEC-Q101 3-Pin(3+Tab) TO-247 Tube
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部品番号 : STW65N65DM2AG
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パッケージ/ケース : TO-247-3
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Brand : STMicroelectronics
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Components Classification : Single FETs, MOSFETs
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日付シート : STW65N65DM2AG データシート (PDF)
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Series : STW65N65DM2AG
概要 STW65N65DM2AG
Featuring a TO247 package, the STW65N65DM2AG MOSFET offers reliable performance in a compact form factor. The Rds(on) test voltage of 10V ensures accurate testing and characterization, making it easy to integrate into existing circuit designs or prototypes
主な特長
- Designed for automotive applications and AEC-Q101 qualified
- Fast-recovery body diode
- Extremely low gate charge and input capacitance
- Low on-resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Manufacturer | STMicroelectronics | Product Category | MOSFET |
RoHS | Details | Technology | Si |
Mounting Style | Through Hole | Package / Case | TO-247-3 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 650 V | Id - Continuous Drain Current | 60 A |
Rds On - Drain-Source Resistance | 50 mOhms | Vgs - Gate-Source Voltage | - 25 V, + 25 V |
Vgs th - Gate-Source Threshold Voltage | 4 V | Qg - Gate Charge | 27 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 446 W | Channel Mode | Enhancement |
Qualification | AEC-Q101 | Tradename | MDmesh |
Series | STW65N65DM2AG | Brand | STMicroelectronics |
Configuration | Single | Fall Time | 11.5 ns |
Height | 5.15 mm | Length | 20.15 mm |
Product | Power MOSFETs | Product Type | MOSFET |
Rise Time | 13.5 ns | Factory Pack Quantity | 600 |
Subcategory | MOSFETs | Type | High Voltage |
Typical Turn-Off Delay Time | 114 ns | Typical Turn-On Delay Time | 33 ns |
Width | 15.75 mm | Unit Weight | 0.211644 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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