SUG80050E-GE3
VISHAY - SUG80050E-GE3 - MOSFET, N-CH, 150V, 100A, TO-247
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部品番号 : SUG80050E-GE3
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パッケージ/ケース : TO-247-3
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Brand : Vishay Siliconix
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Components Classification : Single FETs, MOSFETs
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日付シート : SUG80050E-GE3 データシート (PDF)
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Series : SUG80050E
概要 SUG80050E-GE3
Engineers and hobbyists alike can benefit from the Vishay SUG80050E-GE3 Mosfet's high-quality construction and excellent specifications. The N-Channel design allows for versatile use in both low and high-power applications, while the 150V drain-source voltage rating provides ample headroom for voltage spikes and transients. With a compact TO-247 package, this Mosfet is easy to integrate into your designs, saving valuable board space
主な特長
- High-frequency performance with low ESR
- Capable of handling 10kW of continuous power
- Compliant to major industry standards
- Rigorous testing for maximum reliability
- Low leakage current and high surge immunity
- Precision-engineered for precise control
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | ThunderFET® | Package | Tube |
| Product Status | Active | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Rds On (Max) @ Id, Vgs | 5.4mOhm @ 20A, 10V | Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 165 nC @ 10 V | Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6250 pF @ 75 V | Power Dissipation (Max) | 500W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Through Hole |
| Supplier Device Package | TO-247AC | Package / Case | TO-247-3 |
| Base Product Number | SUG80050 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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