SVD2955T4G
SVD2955T4G is a Power MOSFET designed for use in high-frequency, high-efficiency power conversion applications
在庫：5,454
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : SVD2955T4G
-
パッケージ/ケース : DPAK-3
-
ブランド : Onsemi
-
コンポーネントの分類 : Single FETs, MOSFETs
-
日付シート : SVD2955T4G データシート (PDF)
概要 SVD2955T4G
Featuring a P-channel transistor polarity and a rugged TO-251 case style, the SVD2955T4G is designed to withstand high temperatures, with an operating temperature max of 175°C. With 3 pins for versatile connectivity options, this MOSFET is a versatile and efficient choice for a variety of electrical circuits. Whether you're designing automotive electronics or industrial control systems, the SVD2955T4G offers the performance and reliability you need for your project
主な特長
- Smart Grid and Energy Management Systems
- Automotive Power Distribution and Motor Control
- High Efficiency DC-DC Converter for Industrial Applications
- Rapid Charging and Discharging for Electric Vehicles
- Precision Temperature Control and Monitoring
- Real-Time Data Acquisition and Analysis
応用
- High speed switching
- Low voltage applications
- Powerful motor controls
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Status | Active | Compliance | PbAHP |
| Package Type | DPAK-3 | Case Outline | 369C |
| MSL Type | 1 | MSL Temp (°C) | 260 |
| Container Type | REEL | Container Qty. | 2500 |
| ON Target | Y | Channel Polarity | P-Channel |
| Configuration | Single | V(BR)DSS Min (V) | -60 |
| VGS Max (V) | 20 | VGS(th) Max (V) | -4 |
| ID Max (A) | 12 | PD Max (W) | 55 |
| RDS(on) Max @ VGS = 10 V (mΩ) | 180 | Qg Typ @ VGS = 10 V (nC) | 15 |
| Ciss Typ (pF) | 500 | Pricing ($/Unit) | $0.512 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
NSV60600MZ4T1G
Low VCE(sat) Transistor, PNP type, with 60 volts and 6.0 amps
SVD5867NLT4G
Trans MOSFET N-CH 60V 6A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
NSV60200LT1G
Trans GP BJT PNP 60V 2A 540mW Automotive 3-Pin SOT-23 T/R
NSVBC114YDXV6T1G
SS RSTR XSTR TR bipolar transistors with pre-biased configuration
NSVJ6904DSB6T1G
Trans JFET N-CH 25V 50mA Automotive AEC-Q101 6-Pin CPH T/R
NSVJ3910SB3T1G
JFET with -25V rating, ideal for low power applications
NSVDTC143ZET1G
Trans Digital BJT NPN 50V 100mA 300mW Automotive AEC-Q101 3-Pin SOT-416 T/R
NSVMSD42WT1G
Trans GP BJT NPN 300V 0.15A 450mW Automotive AEC-Q101 3-Pin SC-70 T/R
NSV60601MZ4T3G
Bipolar Transistors - BJT NPN 60V/6A LOW VCE(SAT)
MDD3752RH
Channel MOSFET 40V 43A 3-Pin with 2+Tab
NPT25100B
RF Power Transistor NPT25100B Specifications"
SI7994DP-T1-GE3
N-channel MOSFET transistor designed for switching applications with a maximum voltage of 30V and current rating of 20A
NTGS5120PT1G
This product NTGS5120PT1G consists of SOT-23-6 MOSFETs with RoHS compliance
SI3552DV-T1-E3
Dual Complementary MOSFET with a 30V rating and 2.5/1.8A current capacity in TSOP-6 package
SUM60N10-17-E3
MOSFET 100V 60A 150W
NTMD4N03R2G
SO8 Dual N-Channel Power MOSFET, 30 Volts, 4 Amps
MTW24N40E
MTW24N40E, an N-channel silicon power MOSFET, features a 24A current rating and a 400V voltage rating, alongside a low on-resistance of 0.16 ohms
DMP4015SK3-13
Diodes Inc DMP4015SK3-13 P-channel MOSFET Transistor, 11 A, -40 V, 3-Pin TO-252
BTA25-800CW3G
BTA25-800CW3G: ISO TO220 Triac with 25A Load Capacity and 35mA Gate Trigger