• packageimg
packageimg

SI3552DV-T1-E3

Dual Complementary MOSFET with a 30V rating and 2.5/1.8A current capacity in TSOP-6 package

在庫：5,071

  • 90日間のアフター保証
  • 365日の品質保証
  • 正規品保証
  • 7*24時間サービス検疫

迅速な見積もり

見積もりリクエストを送信してください SI3552DV-T1-E3 このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 SI3552DV-T1-E3

The SI3552DV-T1-E3 is a small signal field-effect transistor designed for applications requiring both N-channel and P-channel functionality. With a maximum drain-source voltage of 30V and a continuous drain current of 2.5A, this MOSFET is well-suited for a variety of circuit designs. The silicon construction and metal-oxide semiconductor technology ensure reliable performance in a range of operating conditions

主な特長

  • Advanced high-speed switching
  • Low on-state resistance
  • Robust construction

応用

  • Power management circuits in various electronic devices.
  • Motor control systems in robotics and automation.
  • Power supply units and inverters.
  • Battery management systems.
  • DC-DC converters and buck-boost regulators.
  • Electric vehicle powertrain applications.

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case TSOP-6
Transistor Polarity N-Channel, P-Channel Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 30 V Id - Continuous Drain Current 2.5 A, 1.8 A
Rds On - Drain-Source Resistance 105 mOhms, 200 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1 V Qg - Gate Charge 3.2 nC, 3.6 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 1.15 W Channel Mode Enhancement
Tradename TrenchFET Series SI3
Brand Vishay Semiconductors Configuration Dual
Height 1.1 mm Length 3.05 mm
Product Type MOSFET Factory Pack Quantity 3000
Subcategory MOSFETs Width 1.65 mm
Part # Aliases SI3552DV-E3 Unit Weight 0.000705 oz

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

  • 配送と梱包

    配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。

    部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。

  • 支払い

    たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。

    特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。

D44C11

D44C11

Compact TO-package ideal for compact designs and space-constrained project
BCP5316TA

BCP5316TA

80 V 1 A 2 W Medium Power Transistor
2SD2537T100V

2SD2537T100V

1.2A NPN Bipolar Transistors operating within a voltage range of 25V
BC847SH6327XTSA1

BC847SH6327XTSA1

The BC847SH6327XTSA1 product features an array of NPN Silicon AF Transistors, providing flexibility in electronic circuitry
FDS7088SN3

FDS7088SN3

N-Channel MOSFET Transistor FDS7088SN3, 21 A, 30 V, 8-Pin SOIC Fairchild
IRF7351PBF

IRF7351PBF

IRF7351PBF SOIC-8 MOSFETs ROHS
SST4392

SST4392

Single-Element Electronic Component
CM75E3U-24H

CM75E3U-24H

N-channel insulated-gate bipolar transistor (IGBT) module with a power rating of 600 watts, capable of handling up to 1200 volts and 75 amperes
IXXH50N60C3D1

IXXH50N60C3D1

600V/100Amp XPT IGBT C3-Class IGBT Transistors CoPacked
2SA2060(TE12L,F)

2SA2060(TE12L,F)

The 2SA2060(TE12L,F) power transistor operates at a frequency of 1MHz and has a power dissipation of 2.5W, with a minimum order quantity of 1000