TP65H050G4WS
Gan FET 650V 34A TO247 MOSFET
在庫：7,027
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部品番号 : TP65H050G4WS
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パッケージ/ケース : TO-247-3
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Brand : Transphorm
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Components Classification : Single FETs, MOSFETs
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日付シート : TP65H050G4WS データシート (PDF)
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Series : SUPERGAN®
概要 TP65H050G4WS
One of the standout features of the TP65H050G4WS is its high breakdown voltage of 50V, which enables it to handle high power levels with ease. Additionally, the low ON resistance of 0.065 ohms allows for efficient power transfer and minimal power dissipation, leading to improved overall performance. Its small footprint and surface-mount design make integration into existing circuit designs a breeze, while its RoHS compliance underscores its commitment to environmentally friendly manufacturing processes
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | SuperGaN® | Package | Tube |
| Product Status | Active | FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) | Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 22A, 10V | Vgs(th) (Max) @ Id | 4.8V @ 700µA |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V | Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 400 V | Power Dissipation (Max) | 119W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 | Package / Case | TO-247-3 |
| Base Product Number | TP65H050 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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