UF3C065030B3
High Voltage SiC FET with Low ON Resistance
在庫：9,274
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- 365日の品質保証
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部品番号 : UF3C065030B3
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パッケージ/ケース : D2PAK-3
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Brand : QORVO
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Components Classification : Single FETs, MOSFETs
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日付シート : UF3C065030B3 データシート (PDF)
概要 UF3C065030B3
The UF3C065030B3 is a cutting-edge silicon carbide (SiC) FET power module, meticulously engineered for optimal performance in high-efficiency power conversion applications. With its innovative half-bridge configuration comprising three integrated SiC power transistors, this module facilitates efficient switching and significantly reduces switching losses. Its 650V rated voltage and continuous 30A current rating make it a versatile solution for various power electronics applications, including inverters, motor drives, and power supplies. Boasting a low on-resistance of 65mΩ, the UF3C065030B3 effectively minimizes conduction losses and enhances overall efficiency, ensuring cost-effective and sustainable operation
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | MOSFET | RoHS | Details |
| Technology | SiC | Mounting Style | SMD/SMT |
| Package / Case | D2PAK-3 (TO-263-3) | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 650 V |
| Id - Continuous Drain Current | 65 A | Rds On - Drain-Source Resistance | 27 mOhms |
| Vgs - Gate-Source Voltage | - 25 V, + 25 V | Vgs th - Gate-Source Threshold Voltage | 4 V |
| Qg - Gate Charge | 51 nC | Minimum Operating Temperature | - 25 C |
| Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 242 W |
| Channel Mode | Enhancement | Qualification | AEC-Q101 |
| Tradename | SiC FET | Series | UF3C |
| Brand | Qorvo | Configuration | Single |
| Fall Time | 15 ns | Product Type | MOSFET |
| Rise Time | 16 ns | Factory Pack Quantity | 800 |
| Subcategory | MOSFETs | Typical Turn-Off Delay Time | 57 ns |
| Typical Turn-On Delay Time | 32 ns | Unit Weight | 0.104600 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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