UF3SC120009K4S
SiC FET with 1200 Volts and 8.6 milliohm Rds(on)
在庫：7,996
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : UF3SC120009K4S
-
パッケージ/ケース : TO247-4
-
ブランド : QORVO
-
コンポーネントの分類 : Single FETs, MOSFETs
-
日付シート : UF3SC120009K4S データシート (PDF)
概要 UF3SC120009K4S
The UF3SC120009K4S module from United Silicon Carbide is a game-changer in the field of power electronics. With its impressive 1200V breakdown voltage and 300A continuous drain current rating, this SiC FET module is designed to meet the demands of high-power applications with ease
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | MOSFET | RoHS | Details |
| Technology | SiC | Mounting Style | Through Hole |
| Package / Case | TO-247-4 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 1.2 kV |
| Id - Continuous Drain Current | 120 A | Rds On - Drain-Source Resistance | 11 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 4 V |
| Qg - Gate Charge | 234 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 789 W |
| Channel Mode | Enhancement | Qualification | AEC-Q101 |
| Tradename | SiC FET | Series | UF3SC |
| Brand | Qorvo | Configuration | Single |
| Product Type | MOSFET | Factory Pack Quantity | 600 |
| Subcategory | MOSFETs | Unit Weight | 0.211644 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
UF3N170400B7S
The UF3N170400B7S product features a SIC JFET configuration, offering a voltage capability of 1700V and a minimal on-resistance of 400mΩ
UF3C065030K3S
Silicon Carbide Power Field-Effect Transistor capable of handling 85A current at 650V voltage
UF3SC065030B7S
Silicon Carbide MOSFET rated at 650 volts with a 30 milliohm on-state resistance, featuring G3 technology and packaged in TO-263-7
UF3SC065030D8S
650V/30mOhm SiC Stacked Fast Cascode G3 DFN8
UF3C120150K4S
Maximum voltage of 1.2KV
UF3C065040K3S
MOSFET with a resistance of 42 milliohms and a voltage rating of 650 volts utilizing silicon carbide cascode technology
UF3C065030K4S
SiC FET with a rating of 650 volts and a resistance of 27 milliohms
UF3SC120016K3S
1.2kV 107A 21mΩ @ 50A, 12V 517W 6V @ 10mA null TO-247-3 MOSFETs ROHS
IRF9530NSPBF
100V 14A Transistor
MRF6V2300NR1
Power LDMOS Transistor N-Channel 110V 5-Pin TO-270 WB EP T/R
IXFN180N20
IXFN180N20: Power MOSFET with N-type channel, capable of handling 200 volts and 180 amperes, packaged in 4 pins using SOT-227B standard
2N4852
High-quality digital signal processo
T2535-800G-TR
T2535-800G-TR STMicroelectronics, TRIAC, 800V 25A, Gate Trigger 1.3V 35mA, 3-Pin D2PAK (TO-263)
NTD3055L104-1G
Bridge circuits
IRF7855PBF
MOSFET 60V 1 N-CH HEXFET 9.4mOhms 26nC
AON7264E
Product AON7264E is a 60V N-Channel MOSFET featuring a DFN3x3A-8L_EP package, compliant with RoHS regulations
SQ2309ES-T1-GE3
Trans MOSFET P-CH 60V 1.7A Automotive 3-Pin SOT-23 T/R
NTGD3148NT1G
Dual N-Channel Power MOSFET with 20V Voltage Rating