VS-GB50NA120UX
Transistor IGBT module for industrial applications
在庫：5,198
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
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部品番号 : VS-GB50NA120UX
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パッケージ/ケース : SOT227-4
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Brand : Siliconix
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Components Classification : IGBT Modules
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日付シート : VS-GB50NA120UX データシート (PDF)
概要 VS-GB50NA120UX
Mitsubishi Electric's VS-GB50NA120UX power module stands out as a pinnacle of innovation, incorporating SiC technology to achieve remarkable efficiency and reliability. With its low losses, high temperature tolerance, and compactness, this module offers a compelling solution for engineers seeking to design space-efficient and high-performing power electronic systems
主な特長
- NPT Generation V IGBT technology
- Square RBSOA
- HEXFRED® clamping diode
- Positive VCE(on) temperature coefficient
- Fully isolated package
- Speed 8 kHz to 60 kHz
- Very low internal inductance ( 5 nH typical)
- Industry standard outline
- UL approved file E78996
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | IGBT Modules | RoHS | Details |
| Configuration | Single | Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Collector-Emitter Saturation Voltage | 3.22 V | Continuous Collector Current at 25 C | 84 A |
| Gate-Emitter Leakage Current | 200 nA | Pd - Power Dissipation | 431 W |
| Package / Case | SOT-227-4 | Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 150 C | Brand | Vishay Semiconductors |
| Maximum Gate Emitter Voltage | 20 V | Mounting Style | SMD/SMT |
| Product Type | IGBT Modules | Factory Pack Quantity | 180 |
| Subcategory | IGBTs | Tradename | HEXFRED |
| Unit Weight | 1.058219 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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