APT5010JVRU2
|
SOT-227 Packaged Transistor with 4 Pins |
Microchip Technology |
5,563 |
|
DSEI2X30-10B
|
Rectifier Diode Switching 1KV 30A 50ns 4-Pin SOT-227B |
Ixys Integrated Circuits Division |
7,370 |
|
DSEI2X31-06C
|
Rectifier Diode Switching 600V 30A 50ns 4-Pin SOT-227B |
Ixys Integrated Circuits Division |
4,987 |
|
IXFN100N50P
|
SOT227B module housing a single transistor rated for 500V and 75A, with screw attachment and a maximum current capability of 250A |
Ixys Integrated Circuits Division |
6,090 |
|
IXFN180N25T
|
With its SOT-227B package, the IXFN180N25T offers robust thermal performance and reliability, ensuring efficient operation in demanding environments |
Ixys Integrated Circuits Division |
7,641 |
|
IXFN140N20P
|
IXFN140N20P MOSFET with 115A Current and 200V Voltage Ratings |
Ixys Integrated Circuits Division |
6,601 |
|
IXFN200N10P
|
IXFN200N10P: N-Type Power MOSFET with 200A Current Rating and 100V Voltage Capability |
Ixys Integrated Circuits Division |
6,807 |
|
IXFN420N10T
|
420A 100V N-Channel Transistor MOSFET 4-Pin SOT-227B |
Ixys Integrated Circuits Division |
5,715 |
|
IXFN320N17T2
|
The IXFN320N17T2 MOSFETs are ROHS-compliant and come in a SOT-227B package for optimal performance |
Ixys Integrated Circuits Division |
8,167 |
|
IXFN64N60P
|
ROHS-approved SOT-227B MOSFETs |
Ixys Integrated Circuits Division |
8,637 |
|
IXKN75N60C
|
High-power N-channel MOSFET transistor in a 4-pin SOT-227B package |
Ixys Integrated Circuits Division |
6,201 |
|
IXTN22N100L
|
Discrete Semiconductor Modules 1000V and 22 Amps |
Ixys Integrated Circuits Division |
7,066 |
|
IXTN550N055T2
|
Single transistor module with 55V voltage rating |
Ixys Integrated Circuits Division |
8,988 |
|
VS-GA250SA60S
|
Product Details: The VS-GA250SA60S IGBT module is engineered with N-channel architecture |
Siliconix |
7,794 |
|
IXTN660N04T4
|
MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-power applications, offering a maximum current rating of 660A at 40V |
Ixys Integrated Circuits Division |
6,367 |
|
IXFN132N50P3
|
SOT-227B package containing a high-power MOSFET transistor |
Ixys Integrated Circuits Division |
6,174 |
|
DSEI2X31-10B
|
Diode Switching 1KV 30A 4-Pin SOT-227B |
Ixys Integrated Circuits Division |
8,388 |
|
IXTN40P50P
|
Introducing IXTN40P50P: A MOSFET enclosed in the SOT-227B casing, designed in accordance with ROHS directives |
Ixys Integrated Circuits Division |
8,017 |
|
IXFN56N90P
|
IXFN56N90P SOT-227B MOSFETs ROHS |
Ixys Integrated Circuits Division |
9,038 |
|
IXFN210N30P3
|
MOSFET Discrete IXFN210N30P3 |
Ixys Integrated Circuits Division |
9,505 |
|
IXFN180N15P
|
IXFN180N15P is a discrete semiconductor module boasting a staggering 180 amps of current capacity and a robust 150 volts rating |
Ixys Integrated Circuits Division |
7,468 |
|
IXFN360N15T2
|
Power MOSFET transistor with N-channel configuration, rated for 150V and a maximum current of 310A |
Ixys Integrated Circuits Division |
9,438 |
|
DSEI2X30-12B
|
Rectifier Diode Switching 1.2KV 28A 60ns 4-Pin SOT-227B |
Ixys Integrated Circuits Division |
8,155 |
|
IXFN44N100P
|
Power Field-Effect Transistor with 37A current, 1000V voltage, and 0.22ohm resistance |
Ixys Integrated Circuits Division |
5,916 |
|
MSC017SMA120J
|
It is designed in a SOT-227 package and complies with ROHS regulations |
Microchip Technology |
5,473 |
|
IXFN150N65X2
|
Ultra Junction X2-Class Discrete Semiconductor Modules IXFN150N65X2: 650V/145A specifications |
Ixys Integrated Circuits Division |
8,005 |
|
IXFN200N07
|
The IXFN200N07 is designed for high-power applications with its impressive specifications and N-channel configuration |
Ixys Integrated Circuits Division |
6,744 |
|
IXFN280N085
|
ROHS SOT-227B MOSFETs |
Ixys Integrated Circuits Division |
7,513 |
|
IXFN73N30
|
045ohm silicon metal-oxide semiconductor FET |
Ixys Integrated Circuits Division |
6,948 |
|
IXFN36N100
|
Power Field-Effect Transistor IXFN36N100 - A high-performance semiconductor device for power management applications |
Ixys Integrated Circuits Division |
6,353 |
|
IXFN24N100
|
IXFN24N100 MOSFET with N-type polarity in SOT-227B housing |
Ixys Integrated Circuits Division |
8,113 |
|
IXFN82N60P
|
High Voltage Power MOSFET |
Ixys Integrated Circuits Division |
6,914 |
|
IXFN230N10
|
IXFN230N10 product description: 230 Amps, 100V, 0.006 Rds |
Ixys Integrated Circuits Division |
7,526 |
|
APT25M100J
|
N-channel MOSFET with a maximum voltage rating of 1KV and a current rating of 25A, packaged in a 4-pin SOT-227 for rail or tube mounting |
Microchip Technology |
9,667 |
|
APT2X61DQ120J
|
1.2KV Rectifier Diode Switching, 60A Current, 265ns Switching Time, Packaged in a 4-Pin SOT-227 Tube |
Microchip Technology |
5,934 |
|
APT2X101D120J
|
Schottky diode array with a voltage rating of 100V in a TO-249 package |
Microchip Technology |
8,318 |
|
APT2X101DQ120J
|
100 A 1200 V Dual Parallel SOT-227 FRED DQ |
Microchip Technology |
5,519 |
|
APT50M50JVR
|
Power component |
Microchip Technology |
9,995 |
|
APT50M38JLL
|
APT50M38JLL is a discrete semiconductor module featuring MOSFET technology |
Microchip Technology |
8,540 |
|
APT50M50JFLL
|
500 V 50 mOhm SOT-227 |
Microchip Technology |
8,161 |
|
IXFN130N30
|
Product IXFN130N30 description |
Ixys Integrated Circuits Division |
6,809 |
|
APT12031JFLL
|
APT12031JFLL is a POWER FREDFET TRANSISTOR |
Microchip Technology |
7,948 |
|
IXFN90N85X
|
Operating with a gate-source voltage of 10V and low leakage current of 5.5V at 8mA |
Ixys Integrated Circuits Division |
6,852 |
|
APT50M75JLLU2
|
The projected end of life for APT50M75JLLU2 with the code CC0059 is October 3, 2048 |
Microchip Technology |
5,968 |
|
VS-GA200SA60UP
|
IGBT transistors, operating as N-channel devices, designed to handle up to 600 volts and 100 amps of current |
Vishay |
7,856 |
|
APT75GP120JDQ3
|
QFP 80 package for camera application IC with link layer |
Microchip Technology |
6,966 |
|
APT46GA90JD40
|
High-power N-channel IGBT module rated for 900V, 87A current and 284000mW power dissipation |
Microchip Technology |
7,301 |
|
APT2X101S20J
|
ROHS-compliant Schottky barrier diodes capable of handling up to 120A of current |
Microchip Technology |
6,114 |
|
APT20M11JVFR
|
200V N-type MOSFET with 175A Current Rating |
Microchip Technology |
5,370 |
|
APL1001J
|
Discrete Semiconductor Modules MOSFET Linear 1000 V 18 A SOT-227 |
Microchip Technology |
9,444 |
|