|
SBC856BDW1T1G
|
Trans GP BJT PNP 65V 0.1A 380mW Automotive AEC-Q101 6-Pin SC-88 T/R |
onsemi |
6,188 |
|
|
UMH9N
|
High-current amplifier for audio applicatio |
ROHM Semiconductor |
8,721 |
|
|
UMD12N
|
The UMD12N transistor is a RoHS certified component in the SOT-363 package |
ROHM Semiconductor |
8,874 |
|
|
SGL0363Z
|
RF/Microwave amplifier with wide bandwidth and low power output |
qorvo |
7,893 |
|
|
SGC2463Z
|
Silicon Germanium Low Noise RF Amplifier |
qorvo |
7,894 |
|
|
SGC2363Z
|
Low power amplifier |
qorvo |
9,388 |
|
|
SI1555DL-T1-GE3
|
Replacement: MOSFET suggested replacement 78-SI1553CDL-T1-GE3 |
vishay |
8,843 |
|
|
SI1403CDL-T1-GE3
|
P-Channel MOSFET with a voltage rating of 20 volts, capable of handling a maximum continuous drain current of 2 |
Vishay Siliconix |
8,492 |
|
|
ECG001F-G
|
Green wide band amplifier |
qorvo |
9,073 |
|
|
DRTR5V0U4S-7
|
TVS Diodes Array with Low Capacitance |
Diodes Incorporated |
7,549 |
|
|
D3V3F4U6S-7
|
5A@(8/20us) 10V 6V 3.3V SOT-363 Electrostatic and Surge Protection TVS/ESD ROHS |
Diodes Incorporated |
8,193 |
|
|
BSS8402DW-7-F
|
Small Signal Field-Effect Transistor |
Diodes Incorporated |
4,184 |
|
|
BAS16TW
|
Rectifier diode in a compact plastic package, RoHS compliant, with three elements and specifications of 0.15A and 75V V(RRM) |
CJ/WINNERJOIN |
7,580 |
|
|
BCR48PN
|
Small signal bipolar transistor with 0 |
infineon |
7,270 |
|
|
BCR133S
|
NPN Silicon Transistor with 2-Element Configuration |
infineon |
6,357 |
|
|
BCR141S
|
Small Signal Bipolar Transistor BCR141S with 0.1A Collector Current and 50V Collector-Emitter Breakdown Voltage |
infineon |
6,624 |
|
|
BCR108S
|
Pre-Biased Bipolar Transistors |
infineon |
9,350 |
|
|
BCR185S
|
Transistor BCR185S with PNP Configuration and 50V Collector-Emitter Voltage |
INFINEON |
5,887 |
|
|
BCR198S
|
BCR198S is a digital transistor offering transconductance amplification for automotive electronics |
infineon |
6,742 |
|
|
BCR135S
|
This product is supplied on tape and reel for convenient automated assembly processes |
infineon |
5,488 |
|
|
BCR35PN
|
Pre-Biased Bipolar Transistors |
infineon |
8,251 |
|
|
BCR10PN
|
NPN and PNP configuration |
infineon |
9,225 |
|
|
BCR116S
|
BCR116S is a pre-biased bipolar transistor component |
infineon |
8,798 |
|
|
BCR148S
|
NPN Silicon Transistor with 2-Element Configuration |
infineon |
5,454 |
|
|
2N7002DW-7-F
|
Unipolar Transistor |
Diodes Incorporated |
7,236 |
|
|
SI1912EDH
|
N-Channel Power MOSFET |
vishay |
6,171 |
|
|
BCR119S
|
Pre-Biased Bipolar Transistor |
Infineon Technologies |
5,977 |
|
|
BCM856S
|
BCM856S PNPAF65V100mASOT363 RL |
infineon |
9,978 |
|
|
BCM846S
|
With its 65V voltage tolerance and 0 |
infineon |
8,422 |
|
|
UMD9NFHATR
|
Transistor Packaged in SOT-363 for Automotive Use with Integrated Bias Resistor |
Rohm Semiconductor |
5,980 |
|
|
RF6C055BC
|
Description: MOSFET optimized for moderate power applications in PCH, offering -20V and -5.5A |
rohm semiconductor |
8,143 |
|
|
DMN601DWK-7
|
60V 305mA MOSFET with a power rating of 200mW |
Diodes Incorporated |
5,902 |
|
|
UMH9NFHATN
|
Bipolar Transistors - Pre-Biased NPN+NPN Digital transistor (Corresponds to AEC-Q101) |
Rohm Semiconductor |
6,126 |
|
|
US6M1
|
4V Drive Nch + 2.5V Drive Pch MOSFET |
ROHM SEMICONDUCTOR |
5,065 |
|
|
BC846PNH6327XTSA1
|
Trans GP BJT NPN/PNP 65V 0.1A 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R |
Infineon Technologies |
8,275 |
|
|
BC856SH6327XTSA1
|
Trans GP BJT PNP 65V 0.1A 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R |
Infineon Technologies |
7,458 |
|
|
BCM856SH6327XTSA1
|
Trans GP BJT PNP 65V 0.1A 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R |
Infineon Technologies |
5,859 |
|
|
BCR08PNH6327XTSA1
|
Trans Digital BJT NPN/PNP 50V 100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R |
Infineon Technologies |
7,475 |
|
|
BCR10PNH6327XTSA1
|
Trans Digital BJT NPN/PNP 50V 100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R |
Infineon Technologies |
7,148 |
|
|
BCR119SH6327XTSA1
|
Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR |
Infineon Technologies |
6,265 |
|
|
BCR133SH6327XTSA1
|
Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR |
Infineon Technologies |
7,357 |
|
|
BCR185SH6327XTSA1
|
Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR |
Infineon Technologies |
7,029 |
|
|
BCR198SH6327XTSA1
|
Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR |
Infineon Technologies |
5,070 |
|
|
BCR22PNH6327XTSA1
|
Trans Digital BJT NPN/PNP 50V 100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R |
Infineon Technologies |
8,513 |
|
|
BSD214SNH6327XTSA1
|
Trans MOSFET N-CH 20V 1.5A Automotive AEC-Q101 6-Pin SOT-363 T/R |
Infineon Technologies |
8,334 |
|
|
BSD314SPEH6327XTSA1
|
Trans MOSFET P-CH 30V 1.5A Automotive AEC-Q101 6-Pin SOT-363 T/R |
Infineon Technologies |
6,797 |
|
|
BSD316SNH6327XTSA1
|
Trans MOSFET N-CH 30V 1.4A Automotive AEC-Q101 6-Pin SOT-363 T/R |
Infineon Technologies |
6,259 |
|
|
BSV236SPH6327XTSA1
|
MOSFET SMALL SIGNAL MOSFETS |
Infineon Technologies |
9,897 |
|
|
CMKT3946 TR PBFREE
|
Dual NPN/PNP configuration ensures flexible circuit design and implementation |
Central Semiconductor Corp |
7,108 |
|
|
CPDV6-5V0U
|
ESD Suppressor Diode TVS Uni-Dir 5V 6-Pin SOT-363 T/R |
Comchip Technology |
8,566 |
|
