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SPD02N60S5

Infineon SPD02N60S5 N-channel MOSFET Transistor, 1.8 A, 600 V, 3-Pin TO-252

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概要 SPD02N60S5

One of the standout features of the SPD02N60S5 is its impressively low on-resistance of 4.7 ohms, a key factor in reducing power losses and enhancing overall efficiency. This attribute, alongside its rapid switching speed, makes it a reliable choice for applications that necessitate quick on/off transitions. Whether operating in extreme temperatures ranging from -55°C to 150°C or confronting challenging scenarios, this MOSFET is geared to deliver consistent performance and reliability

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Source Content uid SPD02N60S5 Pbfree Code Yes
Rohs Code Yes Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG Part Package Code TO-252AA
Package Description GREEN, PLASTIC, TO-252, DPAK-3 Pin Count 3
Reach Compliance Code not_compliant ECCN Code EAR99
Samacsys Manufacturer Infineon Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 50 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 600 V
Drain Current-Max (Abs) (ID) 1.8 A Drain Current-Max (ID) 1.8 A
Drain-source On Resistance-Max 3 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA JESD-30 Code R-PSSO-G2
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 2
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 25 W
Pulsed Drain Current-Max (IDM) 3.2 A Qualification Status Not Qualified
Surface Mount YES Terminal Finish TIN
Terminal Form GULL WING Terminal Position SINGLE
Transistor Element Material SILICON

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    部品の品質保証: 365 日

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