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IPD50R380CEAUMA1

Consumer Grade MOSFET: IPD50R380CEAUMA1

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概要 IPD50R380CEAUMA1

Infineon's IPD50R380CEAUMA1 MOSFET boasts an impressive blend of performance, efficiency, and reliability. This device is a true powerhouse in power electronics, offering exceptional characteristics that set it apart from traditional MOSFET technologies. Its 500V drain-source voltage and 12A continuous drain current capability cater to a wide range of power conversion applications. With a low on-state resistance of 380mΩ and minimal gate charge of 45nC, this MOSFET delivers rapid switching speeds and reduced power losses, making it ideal for high-frequency operations. The sturdy TO-252 package ensures reliable performance in diverse operating conditions, while its environmentally friendly design aligns with lead-free manufacturing standards. The IPD50R380CEAUMA1 is the epitome of innovation and sustainability in the field of power electronics

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Series CoolMOS™ CE Product Status Active
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V Current - Continuous Drain (Id) @ 25°C 14.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 13V Rds On (Max) @ Id, Vgs 380mOhm @ 3.2A, 13V
Vgs(th) (Max) @ Id 3.5V @ 260µA Gate Charge (Qg) (Max) @ Vgs 24.8 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 584 pF @ 100 V
Power Dissipation (Max) 98W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63 Base Product Number IPD50R

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    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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