2SC5824T100R
3A I(C) 60V V(BR)CEO 1-Element NPN Silicon
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 5 | $0.132 | $0.66 |
| 50 | $0.115 | $5.75 |
| 150 | $0.107 | $16.05 |
| 1000 | $0.096 | $96.00 |
| 2000 | $0.091 | $182.00 |
| 5000 | $0.089 | $445.00 |
在庫：5,279
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : 2SC5824T100R
-
パッケージ/ケース : SOT89
-
Brand : Rohm Semiconductor
-
Components Classification : Single Bipolar Transistors
-
日付シート : 2SC5824T100R データシート (PDF)
-
Series : 2SC5824
概要 2SC5824T100R
Crafted with the environment in mind, the 2SC5824T100R is RoHS compliant and lead-free, aligning with modern sustainability standards. Whether you're designing high-tech communications equipment or precision measurement devices, this transistor's high reliability and environmentally conscious design make it a standout choice for demanding applications
応用
High gain bandwidth product
fT = 20 GHz typ.
High power gain and low noise figure;
PG = 17.5 dB typ., NF = 1.15 dB typ. at f = 1.8 GHz
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | Bipolar Transistors - BJT | Transistor Polarity | NPN |
| Configuration | Single | Collector- Emitter Voltage VCEO Max | 60 V |
| Collector- Base Voltage VCBO | 60 V | Emitter- Base Voltage VEBO | 6 V |
| Maximum DC Collector Current | 3 A | Pd - Power Dissipation | 2 W |
| Gain Bandwidth Product fT | 200 MHz | Maximum Operating Temperature | + 150 C |
| Brand | onsemi / Fairchild | DC Collector/Base Gain hfe Min | 180 at 100 mA, 2 V |
| Product Type | BJTs - Bipolar Transistors | Subcategory | Transistors |
| Technology | Si |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
2SD1898T100Q
ROHS compliant silicon
2SCR523EBTL
SOT-416F Transistor
2SD1782KT146R
500 mA, 80 V, 3-Pin SOT-346
2SK3065T100
60V N-channel MOSFET with a maximum current rating of 2A
2SD1898T100R
Technical Summary: Rohm's 2SD1898T100R is an NPN Bipolar Transistor with specifications including a 1 A current rating and an 80 V voltage limit
2SC4081T106Q
Bipolar Transistors - BJT NPN 50V 0.15A SOT-32 3
2SK3541T2L
This item is classified as an electronic device
2SK3018T106
Explore the functionality of the ROHM Semiconductor 2SK3018T106
2SD2656T106
SOT-323 packaged NPN transistor with low VCE (sat), 30V 1A
2SD1980TL
Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, SC-63, 3 PIN
15C01M-TL-E
The product labeled as 15C01M-TL-E is a Transistor, more specifically a NPN Bipolar Junction Transistor (BJT), engineered for general applications
SI3443DDV-T1-GE3
Trans MOSFET P-CH 20V 4A 6-Pin TSOP T/R
NTGD4167CT1G
TSOP-6 Dual Power MOSFET Pair, Complementary, 30V, +/-2.9A
SI3457CDV-T1-GE3
Small Signal Field-Effect Transistor
ZXTN25012EFHTA
SOT-23 ZXTN250 Series NPN Transistor with 1.25 W Power, 12 V Voltage, 6 A Current
AON6590
Silicon Metal-oxide Semiconductor Technology
SMBT3904E6327HTSA1
NPN Bipolar Junction Transistor for General Purpose Applications, with a Maximum Voltage Rating of 40 Volts and Current Rating of 0
NTD18N06LT4G
N-Channel 60V 18A Transistor
HUF75639S3ST
Power Mosfet with N-Channel 100V rating and 0.025 Ohm resistance
IAUS300N08S5N011TATMA1
Product IAUS300N08S5N011TATMA1 is an N-Channel MOSFET with a voltage rating of 80 volts