SI3457CDV-T1-GE3
Small Signal Field-Effect Transistor
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部品番号 : SI3457CDV-T1-GE3
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パッケージ/ケース : TSOP-6
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Brand : Siliconix
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Components Classification : Single FETs, MOSFETs
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日付シート : SI3457CDV-T1-GE3 データシート (PDF)
概要 SI3457CDV-T1-GE3
Additionally, this MOSFET has a maximum drain current of -4.1A and a maximum gate-to-source voltage of -20V, offering flexibility for different operating conditions. It is also free from any Substances of Very High Concern (SVHC), making it environmentally friendly and safe for use in consumer electronics and other applications
主な特長
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | TSOP-6 | Transistor Polarity | P-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
| Id - Continuous Drain Current | 5.1 A | Rds On - Drain-Source Resistance | 74 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 15 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 3 W |
| Channel Mode | Enhancement | Tradename | TrenchFET |
| Series | SI3 | Brand | Vishay Semiconductors |
| Configuration | Single | Fall Time | 10 ns |
| Height | 1.1 mm | Length | 3.05 mm |
| Product Type | MOSFET | Rise Time | 13 ns |
| Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
| Transistor Type | 1 P-Channel | Typical Turn-Off Delay Time | 20 ns |
| Typical Turn-On Delay Time | 5 ns | Width | 1.65 mm |
| Part # Aliases | SI3457CDV-T1-BE3 SI3457BDV-T1-E3-S | Unit Weight | 0.000705 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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