APT10025JVFR
High-power FREDFET component
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $101.990 | $101.99 |
| 200 | $39.469 | $7,893.80 |
| 500 | $38.082 | $19,041.00 |
| 1000 | $37.397 | $37,397.00 |
在庫：8,486
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : APT10025JVFR
-
パッケージ/ケース : SOT-227-4
-
Brand : Microchip Technology
-
Components Classification : Single FETs, MOSFETs
-
日付シート : APT10025JVFR データシート (PDF)
概要 APT10025JVFR
Additionally, the availability of MOSFETs and FREDFETs in all voltage ratings provides flexibility for different application requirements. FREDFETs, in particular, offer a faster recovery intrinsic body diode, leading to improved reliability in zero voltage switching (ZVS) circuits. This is achieved through shorter minority carrier lifetime and increased commutation dv/dt ruggedness. However, for applications where a fast recovery body diode is not necessary, MOSFET versions are also available to meet specific needs
主な特長
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | POWER MOS V® | Package | Tube |
| Product Status | Active | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 1000 V |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) | Rds On (Max) @ Id, Vgs | 250mOhm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 5mA | Gate Charge (Qg) (Max) @ Vgs | 990 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 18000 pF @ 25 V | Mounting Type | Chassis Mount |
| Supplier Device Package | ISOTOP® | Package / Case | SOT-227-4, miniBLOC |
| Base Product Number | APT10025 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
APT25GT120BRDQ2G
Trans IGBT Chip N-CH 1200V 54A 347W 3-Pin(3+Tab) TO-247 Tube
BC847QAPNZ
Trans GP BJT NPN/PNP 45V 0.1A 350mW Automotive AEC-Q101 6-Pin DFN-B EP T/R
NDS352AP
0V 0.9A P-Channel SuperSOT MOSFET Transistor
APT8015JVFR
High-power single transistor module APT8015JVFR with 800V voltage rating
APT8011JFLL
APT8011JFLL MOSFET with 800V Power and 4-Pin SOT-227 Configuration
IRFPS37N50APBF
Transistor MOSFET N-CH 500V 36A 3-Pin TO-274AA T/R
IRFBC40APBF
Trans MOSFET N-CH 600V 6.2A 3-Pin(3+Tab) TO-220AB
APT8015JVR
Product APT8015JVR is an N-channel MOSFET featuring a maximum voltage of 800 volts and a maximum current of 44 amps
APT28M120B2
Packaged in a T-MAX tube
APT100M50J
APT100M50J represents a discrete semiconductor module utilizing MOSFET components
IRF7324PBF
MOSFET Transistor with a Maximum Voltage of 20V and a Current Rating of 9A
ZVP3310FTA
The ZVP3310FTA is a silicon-based P-channel MOSFET designed for small signal applications, capable of handling up to 100V and 75mA of current
IRF612
Power MOSFET IRF612 designed for efficient switching operations with a maximum current of 2.6A and a resistance of 2.4ohm
MJ10009
This product is a NPN transistor with a collector-emitter voltage V(br)ceo of 500V and a power dissipation of 175W
APT50GN120L2DQ2G
Power Semiconductor Device for High Power Applications
ZVN4206AV
The ZVN4206AV is a three-pin E-Line packaged N-channel MOSFET, engineered to handle voltages of up to 60V and currents of 0.6A
IXFH10N100
247AD ROHS MOSFETs
DE375-501N21A
RF power transistors
SISS27ADN-T1-GE3
MOSFET -30V Vds 20V Vgs PowerPAK 1212-8S
IRG4PC40UDPBF
Designed for efficiency in a variety of applications