• packageimg
packageimg

BSC011N03LSATMA1

OptiMOS Power Mosfet with low on-resistance and high conduction capability

在庫：9,751

  • 90日間のアフター保証
  • 365日の品質保証
  • 正規品保証
  • 7*24時間サービス検疫

迅速な見積もり

見積もりリクエストを送信してください BSC011N03LSATMA1 このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 BSC011N03LSATMA1

The BSC011N03LSATMA1 MOSFET is a high-performance N-channel transistor designed for automotive applications. With a drain source voltage (Vds) of 30V and a continuous drain current (Id) of 100A, this MOSFET is capable of handling high-power requirements. It features a low on-resistance (Rds(on)) of 900µohm and a threshold voltage (Vgs) of 2V, making it suitable for a wide range of automotive power management applications. The TDSON-8 case style and 8 pins provide easy installation and secure connections, while the maximum operating temperature of 150°C ensures reliable performance in harsh automotive environments. With a power dissipation (Pd) of 96W, this MOSFET is designed to handle demanding automotive power applications with ease. Its MSL 1 - Unlimited rating and compliance with no SVHC (27-Jun-2018) regulations make it a reliable and environmentally friendly choice for automotive engineers

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Manufacturer Infineon Product Category MOSFET
RoHS Details Technology Si
Mounting Style SMD/SMT Package / Case TDSON-8
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V Id - Continuous Drain Current 230 A
Rds On - Drain-Source Resistance 1.1 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2 V Qg - Gate Charge 72 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 96 W Channel Mode Enhancement
Tradename OptiMOS Brand Infineon Technologies
Configuration Single Fall Time 6.2 ns
Forward Transconductance - Min 85 S Height 1.27 mm
Length 5.9 mm Product Type MOSFET
Rise Time 8.8 ns Factory Pack Quantity 5000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 37 ns Typical Turn-On Delay Time 6.7 ns
Width 5.15 mm Part # Aliases BSC011N03LS SP000799082
Unit Weight 0.003880 oz

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

  • 配送と梱包

    配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。

    部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。

  • 支払い

    たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。

    特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。

DTA043EEBTL

DTA043EEBTL

The description for DTA043EEBTL indicates it is a component rated at -0.1A and housed in an SOT-416FL casing
NVTFS4C13NTAG

NVTFS4C13NTAG

Transistor MOSFET N-channel with 30V voltage and 14A current in 8-pin WDFN package, on tape and reel
NTGS5120PT1G

NTGS5120PT1G

This product NTGS5120PT1G consists of SOT-23-6 MOSFETs with RoHS compliance
STF25NM60N

STF25NM60N

Features 3 pins with a tab for secure connection in circuit applications
C3M0280090J

C3M0280090J

MOSFET G3 made of silicon carbide with a low on-state resistance of 280 milliohms and a voltage rating of 900V
APT50GT60BRDQ2G

APT50GT60BRDQ2G

Inquire for more information
MS2473

MS2473

High-power transistor for RF amplificatio
AOD2916

AOD2916

Product AOD2916 is an N-channel MOSFET with a voltage rating of 100V and a low on-resistance of 34mΩ at a current of 10A
IRFI1310NPBF

IRFI1310NPBF

Full-Pak configuration
NVD5117PLT4G

NVD5117PLT4G

P-Channel 60V 11A Automotive MOSFET, AEC-Q101 Certified, DPAK Package, Tape and Reel