• packageimg
packageimg

DMN2075U-7

Diodes Inc DMN2075U-7 N-channel MOSFET Transistor, 4.2 A, 20 V, 3-Pin SOT-23

数量 単価(USD) 合計金額
5 $0.063 $0.32
50 $0.051 $2.55
150 $0.044 $6.60
500 $0.040 $20.00
3000 $0.036 $108.00
6000 $0.034 $204.00

在庫：5,491

*価格は参考値です。
  • 90日間のアフター保証
  • 365日の品質保証
  • 正規品保証
  • 7*24時間サービス検疫

迅速な見積もり

見積もりリクエストを送信してください DMN2075U-7 このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 DMN2075U-7

The DMN2075U-7 MOSFET transistor features a robust N-channel enhancement mode design that is optimized for high-speed switching applications in power management circuits. Its SOT-26 package enables convenient surface mounting and ensures reliable performance in various electronic devices. With a maximum drain-source voltage rating of 20 volts and a continuous drain current handling capacity of 1.7 amperes, this transistor is well-equipped to meet the demands of modern electronics. Its low on-resistance minimizes power loss and enhances efficiency, while its fast switching speed allows for quick and seamless transitions between on and off states

主な特長

  • Low On-Resistance
  • Very Low Gate Threshold Voltage, 0.9V Max.
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Ultra-Small Surface Mount Package
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • ESD Protected Gate
  • For automotive applications requiring specific change
  • control (i.e. parts qualified to AEC-Q100/101/200, PPAP
  • capable, and manufactured in IATF 16949 certified facilities),
  • please contact us or your local Diodes representative.
  • https://www.diodes.com/quality/product-definitions/

応用

SWITCHING
Diodes Incorporated Inventory

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Manufacturer Diodes Incorporated Product Category FETs - Single
Series DMN2075 Packaging Alternate Packaging
Unit-Weight TO-236-3, SC-59, SOT-23-3 Mounting-Style Surface Mount
Package-Case 1 Channel Technology SOT-23-3
Operating-Temperature 800mW Mounting-Type 594.3pF @ 10V
Number-of-Channels Standard Supplier-Device-Package 4.2A (Ta)
Configuration 38 mOhm @ 3.6A, 4.5V FET-Type 1V @ 250μA
Power-Max + 150 C Transistor-Type 9.8 ns
VDSS – Drain-Source Voltage 8 V Input Capacitance 25 mOhms
FET-Feature 7.4 ns

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

  • 配送と梱包

    配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。

    部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。

  • 支払い

    たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。

    特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。

MCH3474-TL-W

MCH3474-TL-W

Single N-Channel Power MOSFETs in a 3000-piece reel, featuring a 30V rating, 4A current capability, and 50mΩ resistance
VS-20MT120UFP

VS-20MT120UFP

1200V 40A IGBT Module with 240W Power Rating
RFP4N100

RFP4N100

N-Channel Power MOSFET TO-220AB
IRG7S313UPBF

IRG7S313UPBF

Power Transistor Chip with 78mW
IRFS4010TRL7PP

IRFS4010TRL7PP

N-Channel Metal-oxide Semiconductor FET with 1 element
NGTB03N60R2DT4G

NGTB03N60R2DT4G

NGTB03N60R2DT4G: TO-252-2(DPAK) IGBTs compliant with ROHS standards
SPP11N65C3

SPP11N65C3

Infineon SPP11N65C3 N-channel MOSFET Transistor
IXBX50N360HV

IXBX50N360HV

IGBTs 660W 125A 3.6kV TO-247P ROHS
IRG4PC30FDPBF

IRG4PC30FDPBF

These IGBTs come in a TO-247AC package and are capable of handling 100 watts of power
IXZ210N50L2

IXZ210N50L2

75 IXZ210N50L2 n-channel RF MOSFET