DN3135K1-G
Operating at a maximum voltage of 350V, this N-channel MOSFET offers efficient power flow with a low ON-resistance of just 0.072A
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $0.391 | $0.39 |
| 10 | $0.318 | $3.18 |
| 30 | $0.286 | $8.58 |
| 100 | $0.248 | $24.80 |
| 500 | $0.231 | $115.50 |
| 1000 | $0.220 | $220.00 |
在庫：9,021
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : DN3135K1-G
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パッケージ/ケース : SOT23-3
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ブランド : Microchip
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : DN3135K1-G データシート (PDF)
概要 DN3135K1-G
The DN3135K1-G MOSFET is a versatile component designed for N-channel applications, with a maximum continuous drain current of 72mA and a drain-source voltage of 350V. Its low on-resistance of 35ohm ensures efficient power transfer, while the SOT-23-3 casing allows for easy integration into various electronic circuits. With a power dissipation of 360mW, this MOSFET can handle moderate power levels without overheating, making it suitable for a wide range of applications
主な特長
- Fast turn-on and turn-off times
- Maintaining high efficiency
- Compact footprint size
- User-friendly interface
- Precise clocking capabilities
- Resistant to electromagnetic interference
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 350 V |
| Id - Continuous Drain Current | 72 mA | Rds On - Drain-Source Resistance | 35 Ohms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 3.5 V |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 360 mW | Channel Mode | Depletion |
| Brand | Microchip Technology | Configuration | Single |
| Fall Time | 20 ns | Forward Transconductance - Min | 140 mS |
| Height | 0.95 mm | Length | 2.9 mm |
| Product | MOSFET Small Signals | Product Type | MOSFET |
| Rise Time | 15 ns | Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
| Type | FET | Typical Turn-Off Delay Time | 15 ns |
| Typical Turn-On Delay Time | 10 ns | Width | 1.3 mm |
| Unit Weight | 0.000282 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
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