FDMA3028N
Trans MOSFET N-CH 30V 3.8A 6-Pin WDFN EP T/R
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $0.727 | $0.73 |
200 | $0.283 | $56.60 |
500 | $0.272 | $136.00 |
1000 | $0.267 | $267.00 |
在庫:6,844
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : FDMA3028N
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パッケージ/ケース : WDFN EP
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Brand : onsemi
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Components Classification : FET, MOSFET Arrays
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日付シート : FDMA3028N データシート (PDF)
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Series : FDMA3028N
概要 FDMA3028N
The FDMA3028N is a cutting-edge solution tailored specifically for dual switching requirements in cellular handsets and other ultra-portable gadgets. Its design includes two independent N-Channel MOSFETs with low on-state resistance, ensuring minimal conduction losses and maximum efficiency. The compact yet powerful MicroFET 2x2 package offers exceptional thermal performance, making it an excellent choice for linear mode applications where reliability is key
主な特長
- This is FDMA30N05L,'
- a N-channel MOSFET with a voltage rating of 60V and 10A current rating
- Used in high-reliability power supplies and motor control circuits
- Fast switching speed, low on-resistance, and excellent thermal performance
応用
- Game Consoles
- VR Headsets
- E-readers
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | FDMA3028N | Product Status | Obsolete |
Technology | Si | Configuration | Dual |
FET Feature | Logic Level Gate | Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 3.8A | Rds On (Max) @ Id, Vgs | 68mOhm @ 3.8A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 5.2nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 375pF @ 15V | Power - Max | 700mW |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Package / Case | MicroFET-6 | Supplier Device Package | 6-MicroFET (2x2) |
Base Product Number | FDMA3028 | Manufacturer | onsemi |
Product Category | MOSFET | RoHS | Details |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 3.8 A | Rds On - Drain-Source Resistance | 123 mOhms |
Vgs - Gate-Source Voltage | - 12 V, + 12 V | Vgs th - Gate-Source Threshold Voltage | 600 mV |
Qg - Gate Charge | 5.2 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.5 W |
Channel Mode | Enhancement | Tradename | PowerTrench |
Brand | onsemi / Fairchild | Height | 0.75 mm |
Length | 2 mm | Product Type | MOSFET |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 2 N-Channel | Width | 2 mm |
Unit Weight | 0.001411 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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