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FDMC2674

Trans MOSFET N-CH Si 220V 1A 8-Pin WDFN EP T/R

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概要 FDMC2674

Designed to set the standard for efficiency in power conversion, the FDMC2674 UltraFET® device offers a unique combination of features that make it a standout choice for high frequency DC to DC converters. With an optimized rDS(on), low ESR, low total and Miller gate charge, this device is perfect for applications where top performance is crucial. Its exceptional characteristics ensure that power is converted smoothly and effectively, without any compromise on efficiency

主な特長

  • Low VF
  • High Speed Switching
  • Reduced Switch Node Ripples
  • Lower ESR and ESL at 1MHz
  • Higher Junction Temperature TJmax
  • Improved dv/dt Capability

応用

  • Perfect for everyday use
  • Trustworthy and efficient product

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Series FDMC2674 Product Status Last Time Buy
FET Type N-Channel Technology Si
Drain to Source Voltage (Vdss) 220 V Current - Continuous Drain (Id) @ 25°C 1A (Ta), 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 366mOhm @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1180 pF @ 100 V
Power Dissipation (Max) 2.1W (Ta), 42W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package 8-MLP (3.3x3.3)
Package / Case Power-33-8 Base Product Number FDMC26
Manufacturer onsemi Product Category MOSFET
RoHS Details Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 220 V Id - Continuous Drain Current 7 A
Rds On - Drain-Source Resistance 336 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2 V Qg - Gate Charge 18 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 2.1 W Channel Mode Enhancement
Tradename UltraFET Brand onsemi / Fairchild
Configuration Single Fall Time 21 ns
Height 0.8 mm Length 3.3 mm
Product Type MOSFET Rise Time 13 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel Type MOSFET
Typical Turn-Off Delay Time 15 ns Typical Turn-On Delay Time 9 ns
Width 3.3 mm Unit Weight 0.005832 oz

保証と返品

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  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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