FDMC3612
Trans MOSFET N-CH Si 100V 3.3A 8-Pin Power 33 T/R
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $0.845 | $0.84 |
| 10 | $0.732 | $7.32 |
| 30 | $0.675 | $20.25 |
| 100 | $0.618 | $61.80 |
| 500 | $0.562 | $281.00 |
| 1000 | $0.544 | $544.00 |
在庫：9,174
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : FDMC3612
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パッケージ/ケース : Power-33-8
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ブランド : Onsemi
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : FDMC3612 データシート (PDF)
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Series : FDMC3612
概要 FDMC3612
Elevate your electronic designs with the FDMC3612 N-Channel MOSFET, a powerhouse component that showcases the latest in Power Trench® technology. Its state-of-the-art design ensures minimal on-state resistance and superior switching performance, making it an ideal choice for applications where efficiency and performance are paramount. Trust in the FDMC3612 to elevate your projects to new heights
主な特長
- Low Input Capacitance - 1 pF
- High Speed Capability - 100 MHz
- Low Noise Figure - 3 dB
- Wide Temperature Range - -40°C to 125°C
- Compact Size - 2 mm x 0.5 mm
- High Gain Stability - 0.1%
応用
- Great for all projects
- Versatile and reliable
- Perfect for various uses
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | Power-33-8 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 100 V |
| Id - Continuous Drain Current | 16 A | Rds On - Drain-Source Resistance | 122 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 4 V |
| Qg - Gate Charge | 14.4 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 35 W |
| Channel Mode | Enhancement | Series | FDMC3612 |
| Brand | onsemi / Fairchild | Configuration | Single |
| Fall Time | 2 ns | Forward Transconductance - Min | 13 S |
| Height | 0.8 mm | Length | 3.3 mm |
| Product Type | MOSFET | Rise Time | 2.8 ns |
| Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Type | N-Channel Power Trench MOSFET |
| Typical Turn-Off Delay Time | 19 ns | Typical Turn-On Delay Time | 7.4 ns |
| Width | 3.3 mm | Unit Weight | 0.006349 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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