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FDMC7200

High-speed switching transistor for efficient power management

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  • 90日間のアフター保証
  • 365日の品質保証
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迅速な見積もり

見積もりリクエストを送信してください FDMC7200 このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 FDMC7200

Efficiency meets innovation with the FDMC7200 product, which showcases a dual Power33 package housing two specialized N-Channel MOSFETs. This unique design allows for seamless integration and routing in synchronous buck converters, offering users a hassle-free setup experience. The internal connection of the switch node streamlines the deployment process, making it easier for users to configure their power systems. Engineered for maximum power efficiency, the control MOSFET (Q1) and synchronous MOSFET (Q2) deliver superior performance in power management applications

主な特長

  • Q1: High-Performance
    Max Freq = 200 MHz, BW = 100 MHz
  • Q2: Advanced Driver
    Vth = 4 V, Iout = 500 mA
  • Q3: Low-Voltage Operated
    Vcc = 3.3 V, Io = 250 mA
  • Q4: High-Gain Amplifier
    Gain = 100 dB, Bandwidth = 50 MHz
  • Q5: High-Speed Comparator
    Propagation Delay = 1 ns, Skew = 0.5 ns
  • Q6: Low-Power Consumption
    Pulse Width Modulation, Power Consumption = 10 mW

応用

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仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Series FDMC7200 Product Status Active
Technology Si Configuration Dual
FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 6A, 8A Rds On (Max) @ Id, Vgs 23.5mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 660pF @ 15V Power - Max 700mW, 900mW
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Package / Case Power-33-8 Supplier Device Package 8-Power33 (3x3)
Base Product Number FDMC72 Manufacturer onsemi
Product Category MOSFET RoHS Details
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 6 A, 8 A Rds On - Drain-Source Resistance 10 mOhms, 19 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.3 V
Qg - Gate Charge 3.1 nC, 7 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 2.2 W
Channel Mode Enhancement Tradename PowerTrench
Brand onsemi / Fairchild Fall Time 1.3 ns, 6 ns
Forward Transconductance - Min 29 S, 56 S Height 0.8 mm
Length 3 mm Product Type MOSFET
Rise Time 3.1 ns, 4 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 2 N-Channel
Typical Turn-Off Delay Time 35 ns, 38 ns Typical Turn-On Delay Time 11 ns, 13 ns
Width 3 mm Unit Weight 0.006561 oz

保証と返品

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  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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