IXTH10P50P
P-Channel TO-247 MOSFET
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $6.034 | $6.03 |
10 | $5.303 | $53.03 |
30 | $4.858 | $145.74 |
100 | $4.484 | $448.40 |
在庫:9,822
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
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部品番号 : IXTH10P50P
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パッケージ/ケース : TO247-3
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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日付シート : IXTH10P50P データシート (PDF)
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Series : IXTH10P50
概要 IXTH10P50P
With the IXTH10P50P, users can experience the advantages of advanced Polar technology in P-Channel MOSFETS. Through innovative engineering, this product delivers a remarkable 30% decrease in on-state resistance (RDSon) and a 40% reduction in gate charge (Qg) compared to traditional counterparts. As a result, users can benefit from improved conduction loss, superior switching performance, and overall enhanced efficiency. These MOSFETS are also equipped with dynamic dv/dt and avalanche ratings, ensuring robustness and reliability even in demanding environments. Additionally, their positive temperature coefficient in on-state resistance allows for convenient paralleling, offering flexibility and scalability in various applications
主な特長
- High power density module
- Faster switching times achieved
- Ruggedised for harsh environments
- Low gate charge simplifies drive
- Easy to parallel and series
応用
- Robust DC-AC converters
- Advanced battery charger applications
- High-performance automatic test equipment
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Drain-Source Voltage (V) | -500 | Maximum On-Resistance @ 25 ℃ (Ohm) | 1 |
Continuous Drain Current @ 25 ℃ (A) | -10 | Gate Charge (nC) | 50 |
Input Capacitance, CISS (pF) | 2840 | Thermal resistance [junction-case] (K/W) | 0.42 |
Configuration | Single | Package Type | TO-247 |
Typical Reverse Recovery Time (ns) | 414 | Power Dissipation (W) | 300 |
Sample Request | Yes | Check Stock | Yes |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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