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FDMC7664

Efficient switching transistor for power management

在庫：9,233

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概要 FDMC7664

Meet your Power Management and load switching needs head-on with the FDMC7664 N-Channel MOSFET. Utilizing a specialized Power Trench® process, this device excels at reducing on-state resistance to provide optimal performance. Tailored for applications in Notebook Computers and Portable Battery Packs, the FDMC7664 is the perfect choice for those seeking reliability and efficiency in their electronic projects. Step up your game with the FDMC7664 and power through with confidence

主な特長

  • Fast switching time for high efficiency
  • Compact design for space-saving applications
  • High-frequency performance for RF designs
  • Low noise operation for sensitive devices
  • Thermal shutdown for safe operation
  • ESD protection for reliable systems

応用

  • Suitable for any task
  • Trustworthy and efficient
  • An indispensable product

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Series FDMC7664 Product Status Obsolete
FET Type N-Channel Technology Si
Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 18.8A (Ta), 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.2mOhm @ 18.8A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 76 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4865 pF @ 15 V
Power Dissipation (Max) 2.3W (Ta), 45W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package 8-MLP (3.3x3.3)
Package / Case Power-33-8 Base Product Number FDMC76
Manufacturer onsemi Product Category MOSFET
RoHS Details Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V Id - Continuous Drain Current 18.8 A
Rds On - Drain-Source Resistance 4.5 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1 V Qg - Gate Charge 76 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 2.3 W Channel Mode Enhancement
Tradename PowerTrench Brand onsemi / Fairchild
Configuration Single Fall Time 6 ns
Forward Transconductance - Min 115 S Height 0.8 mm
Length 3.3 mm Product Type MOSFET
Rise Time 7 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel
Type Power Trench MOSFET Typical Turn-Off Delay Time 37 ns
Typical Turn-On Delay Time 15 ns Width 3.3 mm
Unit Weight 0.005832 oz

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    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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