IXFN26N90
MOSFETs ROHS IXFN26N90 SOT-227B
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $73.936 | $73.94 |
200 | $29.502 | $5,900.40 |
500 | $28.515 | $14,257.50 |
1000 | $28.029 | $28,029.00 |
在庫:8,647
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : IXFN26N90
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パッケージ/ケース : SOT-227-4
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ブランド : IXYS
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コンポーネントのカテゴリ : Single FETs, MOSFETs
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日付シート : IXFN26N90 データシート (PDF)
概要 IXFN26N90
When it comes to Power MOSFETs, the N-Channel HiPerFET™ Standard series is a standout performer in the industry. Offering exceptional ruggedness and low gate charge, these MOSFETs are ideal for hard switching and resonant mode applications. The fast intrinsic diode ensures quick operation, while the availability of isolated package options adds to its versatility. Whether you're working on a high-power project or a complex industrial application, the HiPerFET™ Standard series has the features you need to get the job done efficiently
主な特長
- Super-Fast Switching Time
- High-Speed Data Transmission
- Compact and Reliable
- Auxiliary Diode Support
応用
- Low electromagnetic interference
- High power output
- Quick installation
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Drain-Source Voltage (V) | 900 | Maximum On-Resistance @ 25 ℃ (Ohm) | 0.3 |
Continuous Drain Current @ 25 ℃ (A) | 26 | Gate Charge (nC) | 240 |
Input Capacitance, CISS (pF) | 8700 | Thermal resistance [junction-case] (K/W) | 0.21 |
Configuration | Single | Package Type | SOT-227 |
Power Dissipation (W) | 600 | Maximum Reverse Recovery (ns) | 250 |
Sample Request | No |
保証と返品
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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