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FDMC7672

Advanced FET Solution for DC-DC Converters and Linear Regulator

在庫：6,790

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概要 FDMC7672

The FDMC7672 N-Channel MOSFET from Fairchild Semiconductor is a top-of-the-line component designed to enhance power management and load switching operations in a variety of electronic devices. Through the use of Fairchild's innovative Power Trench® process, this MOSFET boasts minimal on-state resistance, ensuring optimal performance and efficiency. This makes it the perfect choice for applications commonly found in notebook computers and portable battery packs, where power management is crucial for extended usage

主な特長

  • High-speed switching technology for low power consumption
  • Reliable performance and long lifespan
  • Compliant with industry standards and regulations
  • Advanced materials for increased thermal resistance
  • Robust construction for rugged operating conditions
  • Compact design for easy integration into systems

応用

  • Flexible for various tasks.
  • Suitable for different projects.
  • Adaptable to all scenarios.

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Series FDMC7672 Product Status Active
FET Type N-Channel Technology Si
Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 16.9A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.7mOhm @ 16.9A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 57 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3890 pF @ 15 V
Power Dissipation (Max) 2.3W (Ta), 33W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package 8-MLP (3.3x3.3)
Package / Case Power-33-8 Manufacturer onsemi
Product Category MOSFET RoHS Details
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 16.9 A Rds On - Drain-Source Resistance 5.5 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1.2 V
Qg - Gate Charge 57 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 2.3 W
Channel Mode Enhancement Brand onsemi / Fairchild
Configuration Single Fall Time 5 ns
Forward Transconductance - Min 82 S Height 0.8 mm
Length 3.3 mm Product Type MOSFET
Rise Time 6 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel
Type Power Trench MOSFET Typical Turn-Off Delay Time 31 ns
Typical Turn-On Delay Time 13 ns Width 3.3 mm
Unit Weight 0.005832 oz

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  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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