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FDMC86102L

High-Efficiency Power Conversion Component: This N-Channel Shielded Gate PowerTrench MOSFET offers high power density and fast switching speed

数量 単価(USD) 合計金額
1 $1.214 $1.21
10 $1.013 $10.13
30 $0.886 $26.58
100 $0.755 $75.50
500 $0.648 $324.00
1000 $0.624 $624.00

在庫：5,943

*価格は参考値です。
  • 90日間のアフター保証
  • 365日の品質保証
  • 正規品保証
  • 7*24時間サービス検疫

迅速な見積もり

見積もりリクエストを送信してください FDMC86102L このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 FDMC86102L

Product FDMC86102L is an N-Channel MOSFET created using an advanced PowerTrench® process that features Shielded Gate Technology. The process employed in its production has been perfected to enhance on-state resistance while preserving exceptional switching capabilities. This MOSFET is designed to deliver superior performance in various applications where high efficiency and reliability are crucial

主な特長

  • Economical Design
  • High Power Density
  • Low Vibration Motor Drive
  • RoHS Compliant Packaging
  • Faster Switching Speed
  • Silicon Carbide MOSFET Technology

応用

  • Flexible for numerous tasks.
  • Adaptable in various situations.
  • Suitable for diverse needs.

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Series FDMC86102L Product Status Active
FET Type N-Channel Technology Si
Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 7A (Ta), 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 23mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1330 pF @ 50 V
Power Dissipation (Max) 2.3W (Ta), 41W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package 8-MLP (3.3x3.3)
Package / Case Power-33-8 Base Product Number FDMC86102
Manufacturer onsemi Product Category MOSFET
RoHS Details Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 100 V Id - Continuous Drain Current 18 A
Rds On - Drain-Source Resistance 23 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1 V Qg - Gate Charge 22 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 41 W Channel Mode Enhancement
Tradename PowerTrench Brand onsemi / Fairchild
Configuration Single Forward Transconductance - Min 26 S
Height 0.8 mm Length 3.3 mm
Product Type MOSFET Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel
Width 3.3 mm Unit Weight 0.005832 oz

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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    部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。

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